Deepak Bharti

TL;DR: In this article, flexible organic field effect transistors with high electrical stability upon bending are demonstrated on indium tin oxide coated polyethylene terephthalate substrates with TIPS-Pentacene semiconductor crystals formed by drop casting on a hybrid gate dielectric consisting hafnium dioxide grown by atomic layer deposition and spin coated poly(4-vinylphenol).

TL;DR: High-performance operationally stable organic field-effect transistors were successfully fabricated on a PowerCoat HD 230 paper substrate with a TIPS-pentacene:polystyrene blend as the active layer and poly(4-vinylphenol)/HfO2 as the hybrid gate dielectric and exhibited remarkable stability under effects of gate bias stress and large number of repeated transfer scans with negligible performance spread.

TL;DR: Flexible organic field effect transistors (OFETs) with TIPS-pentacene: polystyrene (PS) blend are demonstrated to exhibit enhanced mobility and significantly improved electrical stability compared to neat TIPS pentacene on poly(4-vinylphenol) (PVP) dielectric (bi-layer OFETs), along with high mechanical stability.

TL;DR: In this paper, a vertical phase separation between TIPS-pentacene and polystyrene as confirmed from scanning electron microscopic image, evetually leads to excellent carrier mobility in polymer blend devices compared to that of neat TIPS -pentaene.

TL;DR: In this paper, flexible organic field effect transistors with 6,13(bis-triisopropylsily-lethynyl) pentacene and polystyrene blend are demonstrated with high electro-mechanical stability.