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Dejan Nikolić

Bio: Dejan Nikolić is an academic researcher. The author has contributed to research in topics: Photodiode & Irradiation. The author has an hindex of 2, co-authored 2 publications receiving 26 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the behavior of various optoelectronic devices after gamma irradiation has been analyzed, including PIN photodiodes, phototransistors, and solar panels.
Abstract: This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

22 citations

Journal ArticleDOI
TL;DR: In this article, the effects of neutron radiation on the characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels).
Abstract: This study investigates the effects of neutron radiation on - characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

12 citations


Cited by
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Journal ArticleDOI
TL;DR: The degradation pathway revealed here emphasizes the need for developing a new generation of metal halide absorbers and ETL materials with improved radiation stability to enable potential space applications of perovskite photovoltaics.
Abstract: We report on the impact of γ radiation (0–500 Gy) on triple-cation Cs0.15MA0.10FA0.75Pb(Br0.17I0.83)3 perovskite solar cells. A set of experiments was designed to reveal the individual contribution...

32 citations

Journal ArticleDOI
01 Jun 2018-Optik
TL;DR: In this article, the effect of absorbed dose on Mg-doped ZnO thin film was investigated for the first time, and it was observed that surface morphology is changed significantly with absorbed dose.

30 citations

Journal ArticleDOI
TL;DR: It is found that gamma radiation increases the waveguide modal effective indices by as much as 4/10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose.
Abstract: Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.

24 citations

Journal ArticleDOI
TL;DR: The results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.
Abstract: Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.

13 citations

Journal ArticleDOI
TL;DR: In this article, a comparative study of gamma and neutron irradiation effects on the solar cells parameters is presented, where the effects of both types of radiation on the silicon solar cells are investigated.
Abstract: Due to its wide application areas, solar cells are exposed, in their work environment, to different types of radiation (cosmic radiation in the upper layers of the atmosphere, military and civilian nuclear facilities). Moreover, the used nuclear fuel emits y photons and neutrons at the same time, so different types of radiation damage appeared in solar cells located in the vicinity of these fuels. These damage have been caused by both gamma and neutron radiation. That's why very extensive researches have been undertaken with the aim of developing semiconductor devices whose work will be reliable in terms of increased levels of radiation. From the technological point of view, it is important to determine changes, caused by radiation, in the parameters of the silicon solar cells that affect their work. The aim of this paper is to present the comparative study of gamma and neutron irradiation effects on the solar cells parameters.

11 citations