Denis Mariolle

Bio: Denis Mariolle is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 22, co-authored 71 publications receiving 1389 citations. Previous affiliations of Denis Mariolle include French Alternative Energies and Atomic Energy Commission & STMicroelectronics.

Lateral interband tunneling transistor in silicon-on-insulator

Abstract: We report on a lateral interband tunneling transistor, where the source and drain form a heavily doped lateral pn junction in a thin Si film on a silicon-on-insulator (SOI) substrate. The transistor action results from the control of the reverse-bias tunneling breakdown under drain bias VD by a gate voltage VG. We observe gate control over tunneling drain current ID at both polarities of VG with negligible gate leakage. Systematic ID(VG,VD) measurements, together with numerical device simulations, show that in first approximation ID depends on the maximum junction electric field Fmax(VG,VD). Excellent performance is hence predicted in devices with more abrupt junctions and thinner SOI films. The device does not have an inversion channel and is not subject to scaling rules of standard Si transistors.

Work function tuning for high-performance solution-processed organic photodetectors with inverted structure.

Abstract: Organic photodetectors with inverted structure are fabricated by solution process techniques. A very thin interfacing layer of polyethyleneimine leads to a homogenous interface with low work function. The devices exhibit excellent performances, in particular in terms of low dark current density, wide range linearity, high detectivity, and remarkable stability in ambient air without encapsulation.

How far will silicon nanocrystals push the scaling limits of NVMs technologies

Abstract: For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively

A hard x-ray nanoprobe for scanning and projection nanotomography

Abstract: To fabricate and qualify nanodevices, characterization tools must be developed to provide a large panel of information over spatial scales spanning from the millimeter down to the nanometer. Synchrotron x-ray-based tomography techniques are getting increasing interest since they can provide fully three-dimensional (3D) images of morphology, elemental distribution, and crystallinity of a sample. Here we show that by combining suitable scanning schemes together with high brilliance x-ray nanobeams, such multispectral 3D volumes can be obtained during a single analysis in a very efficient and nondestructive way. We also show that, unlike other techniques, hard x-ray nanotomography allows reconstructing the elemental distribution over a wide range of atomic number and offers truly depth resolution capabilities. The sensitivity, 3D resolution, and complementarity of our approach make hard x-ray nanotomography an essential characterization tool for a large panel of scientific domains.

A synthetic redox biofilm made from metalloprotein–prion domain chimera nanowires

Abstract: Engineering bioelectronic components and set-ups that mimic natural systems is extremely challenging. Here we report the design of a protein-only redox film inspired by the architecture of bacterial electroactive biofilms. The nanowire scaffold is formed using a chimeric protein that results from the attachment of a prion domain to a rubredoxin (Rd) that acts as an electron carrier. The prion domain self-assembles into stable fibres and provides a suitable arrangement of redox metal centres in Rd to permit electron transport. This results in highly organized films, able to transport electrons over several micrometres through a network of bionanowires. We demonstrate that our bionanowires can be used as electron-transfer mediators to build a bioelectrode for the electrocatalytic oxygen reduction by laccase. This approach opens opportunities for the engineering of protein-only electron mediators (with tunable redox potentials and optimized interactions with enzymes) and applications in the field of protein-only bioelectrodes.

Field-effect tunneling transistor based on vertical graphene heterostructures.

Abstract: An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively Such devices have potential for high-frequency operation and large-scale integration

Tunnel field-effect transistors as energy-efficient electronic switches

Abstract: Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

Abstract: Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.

Double-Gate Tunnel FET With High- $\kappa$ Gate Dielectric

Abstract: In this paper, we propose and validate a novel design for a double-gate tunnel field-effect transistor (DG tunnel FET), for which the simulations show significant improvements compared with single-gate devices using a gate dielectric. For the first time, DG tunnel FET devices, which are using a high-gate dielectric, are explored using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average subthreshold swing of 57 mV/dec, and a minimum point slope of 11 mV/dec. The 2D nature of tunnel FET current flow is studied, demonstrating that the current is not confined to a channel at the gate-dielectric surface. When varying temperature, tunnel FETs with a high-kappa gate dielectric have a smaller threshold voltage shift than those using SiO2, while the subthreshold slope for fixed values of Vg remains nearly unchanged, in contrast with the traditional MOSFET. Moreover, an Ion/Ioff ratio of more than 2 times 1011 is shown for simulated devices with a gate length (over the intrinsic region) of 50 nm, which indicates that the tunnel FET is a promising candidate to achieve better-than-ITRS low-standby-power switch performance.