D
Ding-Kang Shih
Researcher at TSMC
Publications - 7
Citations - 612
Ding-Kang Shih is an academic researcher from TSMC. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 5, co-authored 7 publications receiving 612 citations.
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Patent
Contact Structure of Semiconductor Device
TL;DR: In this paper, the authors describe a contact structure for a semiconductor device consisting of a substrate comprising a major surface and a cavity below the major surface, wherein a strained material in the cavity is different from a lattice constant of the substrate.
Patent
Wrap-Around Contact
Sung-Li Wang,Neng-Kuo Chen,Ding-Kang Shih,Meng-Chun Chang,Yi-An Lin,Gin-Chen Huang,Chen-Feng Hsu,Hau-Yu Lin,Chih-Hsin Ko,Sey-Ping Sun,Clement Hsingjen Wann +10 more
TL;DR: In this article, a dual-layer etch stop is formed over the fin structures and comprises a first sublayer and a second sub-layer, each of which has a widest mid-region between an upper-surface and an under-surface.
Patent
FinFET low resistivity contact formation method
TL;DR: In this paper, the authors proposed a contact structure for a semiconductor device consisting of a substrate comprising a major surface and a trench below the major surface, where a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattices constant of substrate, has received a passivation treatment.
Patent
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
TL;DR: An embodiment of complimentary metal-oxide-semiconductor (CMOS) devices and an embodiment method of forming the same are provided in this article, where an n-type NMOS (NMOS) has a titanium-containing layer interposed between a first metal contact and an NMOS source and a second metal contact, and an NMS drain and a p-type PMOS (PMOS) source having a PMOS source, PMOS drain including a second titanium containing region facing a fourth metal contact.
Patent
Contact Structure of Semiconductor Device Priority Claim
TL;DR: In this article, a contact structure for a semiconductor device is described, where a substrate comprising a major surface and a trench below the major surface, a strained material filling the trench, and an inter-layer dielectric (ILD) layer having an opening over the strained material.