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Dmitri Golberg

Researcher at Queensland University of Technology

Publications -  1043
Citations -  69764

Dmitri Golberg is an academic researcher from Queensland University of Technology. The author has contributed to research in topics: Boron nitride & Carbon nanotube. The author has an hindex of 129, co-authored 1024 publications receiving 61788 citations. Previous affiliations of Dmitri Golberg include Max Planck Society & Applied Science Private University.

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Boron Nitride Nanotubes and Nanosheets

TL;DR: This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotubes/ nanosheet developments.
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ZnS nanostructures: From synthesis to applications

TL;DR: In this paper, a comprehensive review of the state-of-the-art research activities related to ZnS nanostructures is provided, with the focus on the critical experiments determining the electrical, chemical and physical parameters of the nanostructure, and the interplay between synthetic conditions and nanoscale morphologies.
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Boron Nitride Nanotubes

TL;DR: The current status of research on boron nitride nanotubes (BNNTs) is discussed in this article, where a review of recent achievements in BNNT synthesis, morphology, and atomic structure analysis as well as physical, chemical, and functional property evaluations are reviewed.
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Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.

TL;DR: An overview of the progress in functionalized hexagonal boron nitride (h-BN) nanomaterials can be found in this paper, where different functionalization methods, including physical and chemical routes, are comprehensively described toward fabrication of various BN derivatives, hetero- and porous structures, etc.
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“White Graphenes”: Boron Nitride Nanoribbons via Boron Nitride Nanotube Unwrapping

TL;DR: It is shown that few- and single-layered BNnanoribbons, mostly terminated with zigzag edges, can be produced under unwrapping multiwalled BN nanotubes through plasma etching and become semiconducting due to doping-like conducting edge states and vacancy defects.