Dmitry Nikolichev

Bio: Dmitry Nikolichev is an academic researcher. The author has contributed to research in topics: Ion implantation & Charge carrier. The author has an hindex of 1, co-authored 3 publications receiving 2 citations.

Ion implantation in β-Ga2O3: Physics and technology

Abstract: Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics Finally, the most important challenges to be overcome in this field of science and technology are discussed

Gallium nitride nanocrystal formation in Si 3 N 4 matrix by ion synthesis

Abstract: Synthesis of nanoparticles in insulators attracts tremendous attention due to their unique electrical and optical properties. Here, the gallium (Ga) and gallium nitride (GaN) nanoclusters have been synthesized in the silicon nitride matrix by sequential ion implantation (gallium and nitrogen ions) followed by either furnace annealing (FA) or rapid thermal annealing (RTA). The presence of Ga and GaN nanoclusters has been confirmed by Fourier-transform infrared, Raman and X-ray photoelectron spectroscopy. Thereafter, the effect of RTA and FA on the conduction of charge carriers has been studied for the fabricated devices. It is found from the current–voltage measurements that the carrier transport is controlled by the space charge limited current conduction mechanism, and the observed values of parameter m (trap density and the distribution of localized state) for the FA and RTA devices are ~2 and ~4.1, respectively. This reveals that more defects are formed in the RTA device and that FA provides better performance than RTA from the viewpoint of opto- and nano-electronic applications.

Ion implantation in \b{eta}-Ga2O3: physics and technology

Abstract: Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.

Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

Abstract: A review is given of reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3. The commonly observed defect levels span the entire bandgap range in the three stable (β) or meta-stable polymorphs (α and ɛ) and are assigned either to impurities such as Fe or to native defects and their complexes. In the latter case, the defects can occur during crystal growth or by exposure to radiation. Such crystalline defects can adversely affect material properties critical to device operation of transistors and photodetectors, including gain, optical output, threshold voltage by reducing carrier mobility, and effective carrier concentration. The trapping effects lead to degraded device operating speed and are characterized by long recovery transients. There is still significant work to be done to correlate experimental results based on deep level transient spectroscopy and related optical spectroscopy techniques to density functional theory and the dominant impurities present in the various synthesis methods to understand the microscopic nature of defects in Ga2O3.

Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications

Abstract: Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga2O3 are highlighted and discussed along with their transformation state to β-Ga2O3. Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga2O3 nanostructures are discussed.

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

Abstract: β-Ga2O3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous potential for power-switching devices for next-generation high power electronics. The performance of such devices strongly relies on the precise control of electrical properties of β-Ga2O3, which can be achieved by implantation of dopant ions. However, a detailed understanding of the impact of ion implantation on the structure of β-Ga2O3 remains elusive. Here, using aberration-corrected scanning transmission electron microscopy, we investigate the nature of structural damage in ion-implanted β-Ga2O3 and its recovery upon heat treatment with the atomic-scale spatial resolution. We reveal that upon Sn ion implantation, Ga2O3 films undergo a phase transformation from the monoclinic β-phase to the defective cubic spinel [Formula: see text]-phase, which contains high-density antiphase boundaries. Using the planar defect models proposed for the [Formula: see text]-Al2O3, which has the same space group as β-Ga2O3, and atomic-resolution microscopy images, we identify that the observed antiphase boundaries are the {100}1/4 ⟨110⟩ type in cubic structure. We show that post-implantation annealing at 1100 °C under the N2 atmosphere effectively recovers the β-phase; however, nano-sized voids retained within the β-phase structure and a [Formula: see text]-phase surface layer are identified as remanent damage. Our results offer an atomic-scale insight into the structural evolution of β-Ga2O3 under ion implantation and high-temperature annealing, which is key to the optimization of semiconductor processing conditions for relevant device design and the theoretical understanding of defect formation and phase stability.