Dong-Wook Kim

Bio: Dong-Wook Kim is an academic researcher from Seoul National University. The author has contributed to research in topics: Medicine & Thin film. The author has an hindex of 51, co-authored 639 publications receiving 10636 citations. Previous affiliations of Dong-Wook Kim include International Vaccine Institute & Pohang University of Science and Technology.

Contact Tracing during Coronavirus Disease Outbreak, South Korea, 2020.

Abstract: We analyzed reports for 59,073 contacts of 5,706 coronavirus disease (COVID-19) index patients reported in South Korea during January 20-March 27, 2020. Of 10,592 household contacts, 11.8% had COVID-19. Of 48,481 nonhousehold contacts, 1.9% had COVID-19. Use of personal protective measures and social distancing reduces the likelihood of transmission.

Transparent Flexible Graphene Triboelectric Nanogenerators

Abstract: S. Kim, Dr. M. K. Gupta, K. Y. Lee, K.-S. Shin, S. K. Kim, K. H. Lee, Prof. S.-W. Kim School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 440–746 , Republic of Korea E-mail: kimsw1@skku.edu A. Sohn, Prof. D.-W. Kim School of Department of Physics Ewha Womens University Seoul 120–750 , Republic of Korea T. Y. Kim, D. Kim, Prof. S.-W. Kim SKKU Advanced Institute of Nanotechnology (SAINT) Center for Human Interface Nanotechnology (HINT) SKKU-Samsung Graphene Center Sungkyunkwan University (SKKU) Suwon 440–746 , Republic of Korea Dr. H.-J. Shin Samsung Advanced Institute of Technology Yongin 446–712 , Republic of Korea

Random Circuit Breaker Network Model for Unipolar Resistance Switching

Abstract: The existence of reversible resistance switching (RS) behaviors induced by electric stimulus has been known for some time, and these intriguing physical phenomena have been observed in numerous materials, including oxides. As conventional charge-based random access memory is expected to face a size limit in the near future, a surge of renewed interest has been developed in RS phenomena for possible applications in small nonvolatile memory devices called resistance random access memory (RRAM). Of particular interest is unipolar RS, which shows the RS at two values of applied voltage of the same polarity. The unipolar RS exhibits a much larger resistance change than other RS phenomena, and this greatly simplifies the process of reading the memory state. When fabricated with oxide p-n diodes, memory cells using unipolar RS can be stacked vertically, which has the potential for dramatically increasing memory density. Therefore, unipolar RRAM may be a good candidate for multi-stacked, high density, nonvolatile memory. The most important scientific and technical issues concerning unipolar RS are how it works and the identification of its controlling parameters. Some studies have reported that unipolar RS comes from a homogeneous/inhomogeneous transition of current distribution, while others maintain that it comes from the formation and rupture of conducting filaments. Even with recent extensive studies on unipolar RS, its basic origin is still far from being understood. In addition, no model exists that actually explains how the reversible switching can occur at two values of applied voltage. This lack of a quantitative model poses a major barrier for unipolar RRAM applications. In this study, we describe RS behavior in polycrystalline TiO2 film. To explain the basic mechanism of unipolar RS behavior, we propose a new percolation model based on a network of ‘‘circuit breakers’’ with two switchable metastable states. The random circuit breaker (RCB) network model can explain the long-standing material issue of how unipolar RS occurs. This simple percolation model is different from the conventional percolation models, which have dealt only with static or irreversible dynamic processes. In addition, the RCB network model provides an indication of how to overcome the substantial distribution of switching voltages, which is currently considered the most serious obstacle to practical unipolar RRAM applications. The unipolar RS phenomenon can be explained by the current (I)-voltage (V) curves in Figure 1a, which are derived from measurements of our polycrystalline TiO2 thin capacitors. At the pristine state (green dot), they are in an insulating state. As the external voltage Vext increases from zero and reaches a threshold voltage Vforming, a sudden increase occurs in the current. If the current is not limited to a certain value, here called the compliance current Icomp, the TiO2 capacitor would experience a dielectric breakdown and be destroyed. However, [*] Prof. T. W. Noh, S. C. Chae, S. B. Lee, S. H Chang, Dr. C. Liu ReCOE & FPRD, Department of Physics and Astronomy Seoul National University Seoul 151-747 (Korea) E-mail: twnoh@snu.ac.kr

Malignant Tumor Formation After Transplantation of Short-Term Cultured Bone Marrow Mesenchymal Stem Cells in Experimental Myocardial Infarction and Diabetic Neuropathy

Abstract: Rationale:Bone marrow (BM)–derived mesenchymal stem cells (MSCs) hold great promise for cardiovascular cell therapy owing to their multipotency and culture expandability Objective:The aim of the study was to investigate whether MSCs can treat experimental acute myocardial infarction (MI) and diabetic neuropathy Methods and Results:We isolated mononuclear cells from mouse BM and cultured MSCs in a conventional manner Flow cytometry analyses of these cultured cells at passage 4 showed expression of typical MSC markers such as CD44 and CD29, but not hematopoietic markers such as c-kit, flk1, and CD34 To determine the therapeutic effects of MSCs, we injected MSCs into the peri-infarct area after ligation of the left anterior descending coronary arteries of mice and, as separate experiments, injected the same batch of MSCs into hindlimb muscles of mice with diabetic neuropathy During the follow-up at 4 to 8 weeks after cell transplantation, growing tumors were observed in 30% of hearts in the MI model, an

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

Abstract: We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Semiconductor-based Photocatalytic Hydrogen Generation

Abstract: 2.3. Evaluation of Photocatalytic Water Splitting 6507 2.3.1. Photocatalytic Activity 6507 2.3.2. Photocatalytic Stability 6507 3. UV-Active Photocatalysts for Water Splitting 6507 3.1. d0 Metal Oxide Photocatalyts 6507 3.1.1. Ti-, Zr-Based Oxides 6507 3.1.2. Nb-, Ta-Based Oxides 6514 3.1.3. W-, Mo-Based Oxides 6517 3.1.4. Other d0 Metal Oxides 6518 3.2. d10 Metal Oxide Photocatalyts 6518 3.3. f0 Metal Oxide Photocatalysts 6518 3.4. Nonoxide Photocatalysts 6518 4. Approaches to Modifying the Electronic Band Structure for Visible-Light Harvesting 6519

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Abstract: Polarity discontinuities at the interfaces between different crystalline materials (heterointerfaces) can lead to nontrivial local atomic and electronic structure, owing to the presence of dangling bonds and incomplete atomic coordinations. These discontinuities often arise in naturally layered oxide structures, such as the superconducting copper oxides and ferroelectric titanates, as well as in artificial thin film oxide heterostructures such as manganite tunnel junctions. If polarity discontinuities can be atomically controlled, unusual charge states that are inaccessible in bulk materials could be realized. Here we have examined a model interface between two insulating perovskite oxides--LaAlO3 and SrTiO3--in which we control the termination layer at the interface on an atomic scale. In the simple ionic limit, this interface presents an extra half electron or hole per two-dimensional unit cell, depending on the structure of the interface. The hole-doped interface is found to be insulating, whereas the electron-doped interface is conducting, with extremely high carrier mobility exceeding 10,000 cm2 V(-1) s(-1). At low temperature, dramatic magnetoresistance oscillations periodic with the inverse magnetic field are observed, indicating quantum transport. These results present a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.