There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

The remarkable performance of lead halide perovskites in solar cells can be attributed to the long carrier lifetimes and low non-radiative recombination rates, the same physical properties that are ideal for semiconductor lasers. Here, we show room-temperature and wavelength-tunable lasing from single-crystal lead halide perovskite nanowires with very low lasing thresholds (220 nJ cm(-2)) and high quality factors (Q ∼ 3,600). The lasing threshold corresponds to a charge carrier density as low as 1.5 × 10(16) cm(-3). Kinetic analysis based on time-resolved fluorescence reveals little charge carrier trapping in these single-crystal nanowires and gives estimated lasing quantum yields approaching 100%. Such lasing performance, coupled with the facile solution growth of single-crystal nanowires and the broad stoichiometry-dependent tunability of emission colour, makes lead halide perovskites ideal materials for the development of nanophotonics, in parallel with the rapid development in photovoltaics from the same materials.

Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors

Physical Review B

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

/pdf/silicon-microring-resonators-3fzr4lpxbh.pdf

Silicon microring resonators

High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using complementary metal-oxide-semiconductor processing techniques, including deep ultraviolet lithography, was studied. It is concluded that this technology is capable of commercially manufacturing nanophotonic integrated circuits. The possibilities of photonic wires and photonic-crystal waveguides for photonic integration are compared. It is shown that, with similar fabrication techniques, photonic wires perform at least an order of magnitude better than photonic-crystal waveguides with respect to propagation losses. Measurements indicate propagation losses as low as 0.24 dB/mm for photonic wires but 7.5 dB/mm for photonic-crystal waveguides.

Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology

Nanophotonic waveguides and components are promising for use in the large-scale integration of photonic circuits. Coupling light between nanophotonic waveguides and a single-mode fiber is an important problem and many different solutions have been proposed and demonstrated in recent years. In this paper, we discuss a grating coupler approach. Grating couplers can be placed anywhere on a circuit and can easily be integrated. We have experimentally demonstrated >30% coupling efficiency with a 1 dB bandwidth of 40 nm on standard wafers. Theoretically, the coupling efficiency can be improved to >90% using an optimized grating design and layer stack. The fabrication of the couplers in silicon-on-insulator and in indium phosphide membranes is also discussed.

/pdf/grating-couplers-for-coupling-between-optical-fibers-and-242kb9dwcg.pdf

Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides

Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising platform to accommodate such photonic circuits in large-scale configurations. Through heterogeneous integration of InP membranes onto silicon-on-insulator, a single microdisk laser with a diameter of 7.5 µm, coupled to a silicon-on-insulator wire waveguide, is demonstrated here as an all-optical flip-flop working in a continuous-wave regime with an electrical power consumption of a few milliwatts, allowing switching in 60 ps with 1.8 fJ optical energy. The total power consumption and the device size are, to the best of our knowledge, the smallest reported to date at telecom wavelengths. This is also the only electrically pumped, all-optical flip-flop on silicon built upon complementary metal-oxide semiconductor technology. Scientists demonstrate that a single 7.5-μm-diameter microdisk laser coupled to a silicon-on-insulator wire waveguide can work as an all-optical flip-flop memory. Under a continuous bias of 3.5 mA, flip-flop operation is demonstrated using optical triggering pulses of 1.8 fJ and with a switching time of 60 ps. This device is attractive for on-chip all-optical signal buffering, switching, and processing.

/pdf/an-ultra-small-low-power-all-optical-flip-flop-memory-on-a-2cd934u7jl.pdf

An ultra-small, low power all-optical flip-flop memory on a silicon chip

The authors experimentally and theoretically demonstrate stimulated Brillouin scattering in a silicon nanowire supported by a pillar, which results from the tight confinement of both photons and phonons.

/pdf/interaction-between-light-and-highly-confined-hypersound-in-3av8bq6z2u.pdf

Interaction between light and highly confined hypersound in a silicon photonic nanowire

We present compact crossings for silicon-on-insulator photonic wires. The waveguides are broadened using a 3μm parabolic taper in each arm. By locally applying a lower index contrast using a double-etch technique, loss of confinement is reduced and 97.5% transmission (−1.7dB) is achieved with only −40dB cross talk.

/pdf/low-loss-low-cross-talk-crossings-for-silicon-on-insulator-tbr08dhuth.pdf

Dries Van Thourhout

Papers

Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology

Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides

An ultra-small, low power all-optical flip-flop memory on a silicon chip

Interaction between light and highly confined hypersound in a silicon photonic nanowire

Low-loss, low-cross-talk crossings for silicon-on-insulator nanophotonic waveguides.