D
Dzianis Saladukha
Researcher at Tyndall National Institute
Publications - 11
Citations - 197
Dzianis Saladukha is an academic researcher from Tyndall National Institute. The author has contributed to research in topics: Band gap & Direct and indirect band gaps. The author has an hindex of 5, co-authored 11 publications receiving 139 citations. Previous affiliations of Dzianis Saladukha include Cork Institute of Technology.
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Non-equilibrium induction of tin in germanium: towards direct bandgap Ge(1-x)Sn(x) nanowires.
Subhajit Biswas,Jessica Doherty,Dzianis Saladukha,Quentin M. Ramasse,Dipanwita Majumdar,Moneesh Upmanyu,Achintya Singha,Tomasz J. Ochalski,Tomasz J. Ochalski,Michael A. Morris,Justin D. Holmes,Justin D. Holmes +11 more
TL;DR: The fabrication of uniform diameter, direct bandgap Ge1−xSnx alloy nanowires, with a Sn incorporation up to 9.2 at%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts is described.
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Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices
Michael Clavel,Dzianis Saladukha,Patrick S. Goley,Tomasz J. Ochalski,Tomasz J. Ochalski,Felipe Murphy-Armando,Robert J. Bodnar,Mantu K. Hudait +7 more
TL;DR: The successful heterogeneous integration of tunable tensile-strained germanium epilayers heterogeneously integrated on silicon (Si) paves the way for the design and implementation of novel Ge-based photonic devices on the Si technology platform.
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Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies
Dzianis Saladukha,Dzianis Saladukha,Michael Clavel,Felipe Murphy-Armando,Gabriel Greene-Diniz,Myrta Grüning,Mantu K. Hudait,Tomasz J. Ochalski,Tomasz J. Ochalski +8 more
TL;DR: Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band separation as discussed by the authors, and the bands of Ge are bend by means of biaxial tensile strain in order to achieve a direct band gap.
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Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires
Jessica Doherty,Jessica Doherty,Jessica Doherty,Subhajit Biswas,Subhajit Biswas,Subhajit Biswas,Dzianis Saladukha,Quentin M. Ramasse,Tara Shankar Bhattacharya,Achintya Singha,Tomasz J. Ochalski,Justin D. Holmes,Justin D. Holmes,Justin D. Holmes +13 more
TL;DR: In this paper, the influence of growth kinetics on Sn inclusion in Ge1−xSnx alloy nanowires through manipulation of the growth constraints, i.e. temperature, precursor type and catalyst, was reported.
Journal ArticleDOI
Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure
Mantu K. Hudait,Felipe Murphy-Armando,Dzianis Saladukha,Michael Clavel,Patrick S. Goley,Deepam Maurya,Shuvodip Bhattacharya,Tomasz J. Ochalski +7 more
TL;DR: Strain and band gap engineered epitaxial germanium (e-Ge) quantum-well (QW) laser structures were investigated theoretically and experimentally for the first time in this article.