E.D. Baumann

Bio: E.D. Baumann is an academic researcher. The author has contributed to research in topics: Voltage & DC-to-DC converter. The author has an hindex of 1, co-authored 1 publications receiving 1081 citations.

Performance characterization of a high-power dual active bridge DC-to-DC converter

Abstract: The performance of a high-power, high-power-density DC-to-DC converter based on the single-phase dual active bridge (DAB) topology is described. The dual active bridge converter has been shown to have very attractive features in terms of low device and component stresses, small filter components, low switching losses, high power density and high efficiency, bidirectional power flow, buck-boost operation, and low sensitivity to system parasitics. For high output voltages, on the order of kilovolts, a cascaded output structure is considered. The effects of snubber capacitance and magnetizing inductance on the soft switching region of control are discussed. Various control schemes are outlined. Coaxial transformer design techniques have been utilized to carefully control leakage inductance. The layout and experimental performance of a prototype 50 kW 50 kHz unit operating with an input voltage of 200 V DC and an output voltage of 1600 V DC are presented. >

Overview of Dual-Active-Bridge Isolated Bidirectional DC–DC Converter for High-Frequency-Link Power-Conversion System

Abstract: High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.

Eliminate Reactive Power and Increase System Efficiency of Isolated Bidirectional Dual-Active-Bridge DC–DC Converters Using Novel Dual-Phase-Shift Control

Abstract: This paper proposes a novel dual-phase-shift (DPS) control strategy for a dual-active-bridge isolated bidirectional DC-DC converter. The proposed DPS control consists of a phase shift between the primary and secondary voltages of the isolation transformer, and a phase shift between the gate signals of the diagonal switches of each H-bridge. Simulation on a 600-V/5-kW prototype shows that the DPS control has excellent dynamic and static performance compared to the traditional phase-shift control (single phase shift). In this paper, the concept of ldquoreactive powerrdquo is defined, and the corresponding equations are derived for isolated bidirectional DC-DC converters. It is shown that the reactive power in traditional phase-shift control is inherent, and is the main factor contributing to large peak current and large system loss. The DPS control can eliminate reactive power in isolated bidirectional DC-DC converters. In addition, the DPS control can decrease the peak inrush current and steady-state current, improve system efficiency, increase system power capability (by 33%), and minimize the output capacitance as compared to the traditional phase-shift control. The soft-switching range and the influence of short-time-scale factors, such as deadband and system-level safe operation area, are also discussed in detail. Under certain operation conditions, deadband compensation can be implemented easily in the DPS control without a current sensor.

SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

Abstract: Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.

A Bidirectional DC–DC Converter for an Energy Storage System With Galvanic Isolation

Abstract: This paper addresses a bidirectional dc-dc converter suitable for an energy storage system with an additional function of galvanic isolation. An energy storage device such as an electric double layer capacitor is directly connected to a dc side of the dc-dc converter without any chopper circuit. Nevertheless, the dc-dc converter can continue operating when the voltage across the energy storage device drops along with its discharge. Theoretical calculation and experimental measurement reveal that power loss and peak current impose limitations on a permissible dc-voltage range. This information may be useful in design of the dc-dc converter. Experimental results verify proper charging and discharging operation obtained from a 200-V, 2.6-kJ laboratory model of the energy storage system. Moreover, the dc-dc converter can charge the capacitor bank from zero to the rated voltage without any external precharging circuit.

A Bidirectional Isolated DC–DC Converter as a Core Circuit of the Next-Generation Medium-Voltage Power Conversion System

Abstract: This paper describes a bidirectional isolated dc-dc converter considered as a core circuit of 3.3-kV/6.6-kV high-power-density power conversion systems in the next generation. The dc-dc converter is intended to use power switching devices based on silicon carbide (SiC) and/or gallium nitride, which will be available on the market in the near future. A 350-V, 10-kW and 20 kHz dc-dc converter is designed, constructed and tested. It consists of two single-phase full-bridge converters with the latest trench-gate insulated gate bipolar transistors and a 20-kHz transformer with a nano-crystalline soft-magnetic material core and litz wires. The transformer plays an essential role in achieving galvanic isolation between the two full-bridge converters. The overall efficiency from the dc-input to dc-output terminals is accurately measured to be as high as 97%, excluding gate drive and control circuit losses from the whole loss. Moreover, loss analysis is carried out to estimate effectiveness in using SiC-based power switching devices. Loss analysis clarifies that the use of SiC-based power devices may bring a significant reduction in conducting and switching losses to the dc-dc converter. As a result, the overall efficiency may reach 99% or higher