Self-assembling aluminium nanoparticles are used to make a plasmon-enhanced device for desalination. Plasmonics has generated tremendous excitement because of its unique capability to focus light into subwavelength volumes1, beneficial for various applications such as light harvesting2,3, photodetection4, sensing5, catalysis6 and so on. Here we demonstrate a plasmon-enhanced solar desalination device, fabricated by the self–assembly of aluminium nanoparticles into a three-dimensional porous membrane. The formed porous plasmonic absorber can float naturally on water surface, efficiently absorb a broad solar spectrum (>96%) and focus the absorbed energy at the surface of the water to enable efficient (∼90%) and effective desalination (a decrease of four orders of magnitude). The durability of the devices has also been examined, indicating a stable performance over 25 cycles under various illumination conditions. The combination of the significant desalination effect, the abundance and low cost of the materials, and the scalable production processes suggest that this type of plasmon-enhanced solar desalination device could provide a portable desalination solution.

3D self-assembly of aluminium nanoparticles for plasmon-enhanced solar desalination

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

Inorganic semiconductor light-emitting diodes (LEDs) are environmentally benign and have already found widespread use as indicator lights, large-area displays, and signage applications. In addition, LEDs are very promising candidates for future energy-saving light sources suitable for office and home lighting applications. Today, the entire visible spectrum can be covered by light-emitting semiconductors: AlGaInP and AlGaInN compound semiconductors are capable of emission in the red to yellow wavelength range and ultraviolet (uv) to green wavelength range, respectively. Currently, two basic approaches exist for white light sources: The combination of one or more phosphorescent materials with a semiconductor LED and the use of multiple LEDs emitting at complementary wavelengths. Both approaches are suitable for high efficiency sources that have the potential to replace incandescent and fluorescent lights. In this article, the properties of inorganic LEDs will be presented, including emission spectra, electrical characteristics, and current-flow patterns. Structures providing high internal quantum efficiency, namely, heterostructures and multiple quantum well structures, will be discussed. Advanced techniques enhancing the external quantum efficiency will be reviewed, including resonant-cavities, die shaping (chip shaping), omnidirectional reflectors, and photonic crystals. Different approaches to white LEDs will be presented and figures-of-merit such as the color rendering index, luminous efficacy, and luminous efficiency will be explained. Finally, the packaging of low power and high power LED dies will be discussed.


Keywords:

light-emitting diodes (LEDs);
solid-state lighting;
compound semiconductors;
device physics;
reflectors;
resonant cavity LEDs;
white LEDs;
packaging

Light Emitting Diodes

Although power conversion efficiency (PCE) of state-of-the-art perovskite solar cells has already exceeded 20%, photo- and/or moisture instability of organolead halide perovskite have prevented further commercialization. In particular, the underlying weak interaction of organic cations with surrounding iodides due to eight equivalent orientations of the organic cation along the body diagonals in unit cell and chemically non-inertness of organic cation result in photo- and moisture instability of organometal halide perovskite. Here, a perovskite light absorber incorporating organic–inorganic hybrid cation in the A-site of 3D APbI3 structure with enhanced photo- and moisture stability is reported. A partial substitution of Cs+ for HC(NH2)2+ in HC(NH2)2PbI3 perovskite is found to substantially improve photo- and moisture stability along with photovoltaic performance. When 10% of HC(NH2)2+ is replaced by Cs+, photo- and moisture stability of perovskite film are significantly improved, which is attributed to the enhanced interaction between HC(NH2)2+ and iodide due to contraction of cubo-octahedral volume. Moreover, trap density is reduced by one order of magnitude upon incorporation of Cs+, which is responsible for the increased open-circuit voltage and fill factor, eventually leading to enhancement of average PCE from 14.9% to 16.5%.

Formamidinium and Cesium Hybridization for Photo- and Moisture-Stable Perovskite Solar Cell

Anti-reflective coatings (ARCs) have evolved into highly effective reflectance and glare reducing components for various optical and opto-electrical equipments. Extensive research in optical and biological reflectance minimization as well as the emergence of nanotechnology over the years has contributed to the enhancement of ARCs in a major way. In this study the prime objective is to give a comprehensive idea of the ARCs right from their inception, as they were originally conceptualized by the pioneers and lay down the basic concepts and strategies adopted to minimize reflectance. The different types of ARCs are also described in greater detail and the state-of-the-art fabrication techniques have been fully illustrated. The inspiration that ARCs derive from nature (‘biomimetics’) has been an area of major research and is discussed at length. The various materials that have been reportedly used in fabricating the ARCs have also been brought into sharp focus. An account of application of ARCs on solar cells and modules, contemporary research and associated challenges are presented in the end to facilitate a universal understanding of the ARCs and encourage future research.

Anti-reflective coatings: A critical, in-depth review

The efficiency droop in GaInN∕GaN multiple-quantum well (MQW) light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the recombination of carriers outside the MQW region. Simulations show that polarization fields in the MQW and electron blocking layer enable the escape of electrons from the MQW region and thus are the physical origin of the droop. It is shown that through the use of proper quaternary AlGaInN compositions, polarization effects are reduced, thereby minimizing droop and improving efficiency.

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Origin of efficiency droop in GaN-based light-emitting diodes

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

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Blue multi-quantum-well light-emitting diodes (LEDs) with GaInN quantum wells and polarization-matched AlGaInN barriers are grown by metal-organic chemical vapor deposition. The use of quaternary alloys enables an independent control over interface polarization charges and bandgap and has been suggested as a method to reduce electron leakage from the active region, a carrier loss mechanism that can reduce efficiency at high injection currents—an effect known as the efficiency droop. The GaInN∕AlGaInN LEDs show reduced forward voltage, reduced efficiency droop, and improved light-output power at large currents compared to conventional GaInN∕GaN LEDs.

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Design, fabrication, and characterization of a broadband, omnidirectional, graded-index antireflection (AR) coating made using nanostructured low-refractive-index (n=1.05–1.40) silica deposited by oblique-angle deposition are reported. Averaged over wavelength range from 400 to 1100 nm and 0°–90° angle of incidence, polished Si reflects ∼37% of incident radiation. The reflection losses are reduced to only 5.9% by applying a three-layer graded-index AR coating to Si. Our experimental results are in excellent agreement with theoretical calculations. The AR coatings reported here can be optimized for photovoltaic cells made of any type of material.

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E. Fred Schubert

Papers

Origin of efficiency droop in GaN-based light-emitting diodes

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics