Author
E. Getto
Other affiliations: University of Michigan
Bio: E. Getto is an academic researcher from United States Naval Academy. The author has contributed to research in topics: Irradiation & Microstructure. The author has an hindex of 8, co-authored 16 publications receiving 465 citations. Previous affiliations of E. Getto include University of Michigan.
Papers
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TL;DR: In this paper, the microstructure of ion-irradiated ferritic-martensitic steel closely resembles that created in-reactor across the full range of micro-structure features.
228 citations
TL;DR: In this paper, the void swelling and microstructure evolution of ferritic-martensitic alloys HT9, T91 and T92 were characterized following irradiation with Fe ++ ions at 460°C to damage levels of 75-650 displacements per atom with 10 atom parts per million pre-implanted helium.
80 citations
TL;DR: In this paper, void evolution in Fe ++ -irradiated ferritic-martensitic alloy HT9 was characterized in the temperature range of 400-480°C between doses of 25 and 375 displacements per atom (dpa) with pre-implanted helium levels of 0-100appm.
72 citations
TL;DR: In this paper, the microstructures of ferritic-martensitic alloys HT9 and T91 were characterized following 5 MeV−Fe ++ ion irradiation to 140 displacements per atom (dpa) at 440°C with either a raster-scanned or defocused beam.
67 citations
TL;DR: In this paper, a combination of ion irradiation and modeling was utilized to understand the microstructure evolution of ferritic-martensitic alloy HT9 at high dpa.
50 citations
Cited by
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TL;DR: In this paper, the authors summarized and analyzed the current understandings on the influence of various types of internal defect sinks on reduction of radiation damage in primarily nanostructured metallic materials, and partially on nanoceramic materials.
288 citations
01 Jan 2013
TL;DR: In this paper, a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances is presented, indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.
Abstract: The "textbook" phonon mean free path of heat carrying phonons in silicon at room temperature is ∼40 nm. However, a large contribution to the thermal conductivity comes from low-frequency phonons with much longer mean free paths. We present a simple experiment demonstrating that room-temperature thermal transport in Si significantly deviates from the diffusion model already at micron distances. Absorption of crossed laser pulses in a freestanding silicon membrane sets up a sinusoidal temperature profile that is monitored via diffraction of a probe laser beam. By changing the period of the thermal grating we vary the heat transport distance within the range ∼1-10 μm. At small distances, we observe a reduction in the effective thermal conductivity indicating a transition from the diffusive to the ballistic transport regime for the low-frequency part of the phonon spectrum.
285 citations
238 citations
TL;DR: In this article, the impact of compositional complexity on the ion-irradiation induced swelling and hardening was studied in Ni and six Ni-containing equiatomic alloys with face-centered cubic structure.
233 citations
TL;DR: In this article, the influence of near-surface denuded zones and implanted ion effects is analyzed, including diffusional broadening effects, at high ion irradiation energies, which can lead to enhanced defect production or recovery.
225 citations