E. M. Kaidashev

Bio: E. M. Kaidashev is an academic researcher from Leipzig University. The author has contributed to research in topics: Pulsed laser deposition & Dielectric. The author has an hindex of 17, co-authored 28 publications receiving 3016 citations. Previous affiliations of E. M. Kaidashev include Southern Federal University.

High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

Abstract: A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.

Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li

Abstract: Polarized micro-Raman measurements were performed to study the phonon modes of Fe, Sb, Al, Ga, and Li doped ZnO thin films, grown by pulsed-laser deposition on c-plane sapphire substrates. Additional modes at about 277, 511, 583, and 644 cm−1, recently assigned to N incorporation [A. Kaschner et al., Appl. Phys. Lett. 80, 1909 (2002)], were observed for Fe, Sb, and Al doped films, intentionally grown without N. The mode at 277 cm−1 occurs also for Ga doped films. These modes thus cannot be related directly to N incorporation. Instead, we suggest host lattice defects as their origin. Further additional modes at 531, 631, and 720 cm−1 seem specific for the Sb, Ga, and Fe dopants, respectively. Li doped ZnO did not reveal additional modes.

Infrared dielectric functions and phonon modes of high-quality ZnO films

Abstract: Infrared dielectric function spectra and phonon modes of high-quality, single crystalline, and highly resistive wurtzite ZnO films were obtained from infrared (300–1200 cm−1) spectroscopic ellipsometry and Raman scattering studies. The ZnO films were deposited by pulsed-laser deposition on c-plane sapphire substrates and investigated by high-resolution x-ray diffraction, high-resolution transmission electron microscopy, and Rutherford backscattering experiments. The crystal structure, phonon modes, and dielectric functions are compared to those obtained from a single-crystal ZnO bulk sample. The film ZnO phonon mode frequencies are highly consistent with those of the bulk material. A small redshift of the longitudinal optical phonon mode frequencies of the ZnO films with respect to the bulk material is observed. This is tentatively assigned to the existence of vacancy point defects within the films. Accurate long-wavelength dielectric constant limits of ZnO are obtained from the infrared ellipsometry anal...

Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section.

Abstract: The size dependence of whispering gallery modes in dielectric resonators with hexagonal cross section has been observed within the visible spectral range for cavity diameters comparable to the light wavelength. As a model system single, tapered, high aspect ratio zinc oxide nanoneedles were analyzed. They enable systematic investigations as a function of the resonator diameter down to the nanometer regime. A simple plane wave interference model without free parameter describes the spectral positions and the linewidths of the modes in good agreement with the experiment.

MgxZn1−xO(0⩽x<0.2) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition

Abstract: MgxZn1−xO nanowires with Mg-content x from 0 to 0.2 have been grown by high-pressure pulsed-laser deposition (PLD) on gold-covered sapphire single crystals. The PLD process allows for a unique wide-range control of morphology, diameter, and composition of the MgxZn1−xO nanowires. The diameter of single ZnO wires could be varied between about 50 and 3000 nm, and the Mg content x of MgxZn1−xO wire arrays was controlled via the PLD gas pressure. The microscopic homogeneity of Mg content is displayed by cathodoluminescence (CL) imaging of the excitonic peak energy. The fluctuation of CL peak energy between individual wires is about an order of magnitude smaller than the alloy broadening.

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

One-dimensional ZnO nanostructures: Solution growth and functional properties

Abstract: One-dimensional (1D) ZnO nanostructures have been studied intensively and extensively over the last decade not only for their remarkable chemical and physical properties, but also for their current and future diverse technological applications. This article gives a comprehensive overview of the progress that has been made within the context of 1D ZnO nanostructures synthesized via wet chemical methods. We will cover the synthetic methodologies and corresponding growth mechanisms, different structures, doping and alloying, position-controlled growth on substrates, and finally, their functional properties as catalysts, hydrophobic surfaces, sensors, and in nanoelectronic, optical, optoelectronic, and energy harvesting devices.

Temperature dependence of Raman scattering in ZnO

Abstract: We present a Raman scattering study of wurtzite $\mathrm{ZnO}$ over a temperature range from 80 to $750\phantom{\rule{03em}{0ex}}\mathrm{K}$ Second-order Raman features are interpreted in the light of recent ab initio phonon density of states calculations The temperature dependence of the Raman intensities allows the assignment of difference modes to be made unambiguously Some weak, sharp Raman peaks are detected whose temperature dependence suggests they may be due to impurity modes High-resolution spectra of the ${E}_{2}^{\mathrm{high}}$, ${A}_{1}(\mathrm{LO})$, and ${E}_{1}(\mathrm{LO})$ modes were recorded, and an analysis of the anharmonicity and lifetimes of these phonons is carried out The ${E}_{2}^{\mathrm{high}}$ mode displays a visibly asymmetric line shape This can be attributed to anharmonic interaction with transverse and longitudinal acoustic phonon combinations in the vicinity of the $K$ point, where the two-phonon density of states displays a sharp edge around the ${E}_{2}^{\mathrm{high}}$ frequency The temperature dependence of the linewidth and frequency of the ${E}_{2}^{\mathrm{high}}$ mode is well described by a perturbation-theory renormalization of the harmonic ${E}_{2}^{\mathrm{high}}$ frequency resulting from the interaction with the acoustic two-phonon density of states In contrast, the ${A}_{1}(\mathrm{LO})$ and ${E}_{1}(\mathrm{LO})$ frequencies lie in a region of nearly flat two-phonon density of states, and they exhibit a nearly symmetric Lorentzian line shape with a temperature dependence that is well accounted for by a dominating asymmetric decay channel

Process for atomic layer deposition

Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.