E. Pelve

Bio: E. Pelve is an academic researcher. The author has contributed to research in topics: Quantum tunnelling & Dark current. The author has an hindex of 2, co-authored 2 publications receiving 398 citations.

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

Abstract: By increasing the quantum well barrier width, we have dramatically reduced the tunneling dark current by an order of magnitude and thereby significantly increased the blackbody detectivity D*BB. For a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm, we have achieved D*BB =1.0×1010 cm (Hz)1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.

Analysis of the dark current in doped‐well multiple quantum well AlGaAs infrared photodetectors

Abstract: We have studied the origin of the dark current in λ=8 μm peak wavelength 40‐A GaAs/300‐A Al0.3 Ga0.7 As multiple quantum well photodetectors. By carefully controlling the experimental conditions we have measured the dark current for temperatures in the range 4–120 K. The experimental characteristics are explained by thermionic emission for low biases and tunneling for high biases.

Planar-integrated single-crystalline perovskite photodetectors

Abstract: Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 10(4) electrons per photon) and high gain-bandwidth product (above 10(8) Hz) relative to other perovskite-based optical sensors.

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

Abstract: By increasing the quantum well barrier width, we have dramatically reduced the tunneling dark current by an order of magnitude and thereby significantly increased the blackbody detectivity D*BB. For a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm, we have achieved D*BB =1.0×1010 cm (Hz)1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.

A Self-Powered and Flexible Organometallic Halide Perovskite Photodetector with Very High Detectivity.

Abstract: Flexible and self-powered photodetectors (PDs) are highly desirable for applications in image sensing, smart building, and optical communications. In this paper, a self-powered and flexible PD based on the methylammonium lead iodide (CH3 NH3 PBI3 ) perovskite is demonstrated. Such a self-powered PD can operate even with irregular motion such as human finger tapping, which enables it to work without a bulky external power source. In addition, with high-quality CH3 NH3 PBI3 perovskite thin film fabricated with solvent engineering, the PD exhibits an impressive detectivity of 1.22 × 1013 Jones. In the self-powered voltage detection mode, it achieves a large responsivity of up to 79.4 V mW-1 cm-2 and a voltage response of up to ≈90%. Moreover, as the PD is made of flexible and transparent polymer films, it can operate under bending and functions at 360 ° of illumination. As a result, the self-powered, flexible, 360 ° omnidirectional perovskite PD, featuring high detectivity and responsivity along with real-world sensing capability, suggests a new direction for next-generation optical communications, sensing, and imaging applications.

Self-assembled InAs-GaAs quantum-dot intersubband detectors

Abstract: The use of self-assembled InAs-GaAs quantum dots in photoconductive intersubband detectors in the far-infrared is presented. Far-infrared absorption is observed in self-assembled quantum dots in the 6-18-/spl mu/m range for subband-subband and subband-continuum transitions. Photoconductive quantum-dot intersubband detectors were fabricated and demonstrate tunable operating wavelengths between 6-18 /spl mu/m using subband-subband or subband-continuum transitions. The use of AlAs barriers allows further tuning to shorter wavelengths of 3-7 /spl mu/m. Subband-continuum quantum dot intersubband detectors show encouraging normal incidence performance characteristics at T=40 K, with responsivities of 10-100 mA/W, detectivities of 1-10 /spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W and large photoconductive gain up to g=12 for a ten-layer quantum-dot heterostructure. With improvements in device structure, self-assembled quantum dots can be expected to provide intrinsic normal incidence broad-band detectors with advantages over quantum wells.

Photoconductive gain mechanism of quantum‐well intersubband infrared detectors

Abstract: Taking into account the discrete nature of the quantum‐well intersubband infrared detectors, we construct a model to calculate the photoconductive gain. It is shown that the photoconductive gain is inversely proportional to the number of quantum wells and that the detector‐current responsivity is independent of the number of wells.