scispace - formally typeset
Search or ask a question
Author

E Pschorr-Schoberer

Bio: E Pschorr-Schoberer is an academic researcher from University of Regensburg. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Thin film. The author has an hindex of 1, co-authored 1 publications receiving 8 citations.

Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, the authors studied the low-temperature growth and doping of polycrystalline ZnSe by MOCVD using ditertiary-butylselenide (DtBSe) and dimethylzinc-triethylamine (DMZn-TEN) precursors.

8 citations


Cited by
More filters
Journal ArticleDOI
Tao Lu1, Shanmu Dong1, Chuanjian Zhang1, Lixue Zhang1, Guanglei Cui1 
TL;DR: In this article, transition metal selenides (TMSs) are proposed as potential materials for electrochemical energy storage systems and their properties, preparation methods, and applications are discussed.

178 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated a large series of solar cells with varied thickness of both types of buffer layers by means of quantum efficiency measurements in equilibrium and under light and voltage bias, and the characterization of the devices concentrates on the collection of photogenerated holes from the buffer layer.
Abstract: We investigate Cu(In,Ga)Se 2 -based solar cells with a new ZnSe buffer layer deposited by metal-organic vapour deposition and compare their electronic properties to reference cells using a standard CdS buffer layer. The best solar cell with a ZnSe buffer layer achieves an efficiency of 11.6%. We further investigate a large series of solar cells with varied thickness of both types of buffer layers by means of quantum efficiency measurements in equilibrium and under light and voltage bias. The characterization of the devices concentrates on the analysis of the collection of photogenerated holes from the buffer layer. We introduce a new method to determine the recombination probability of holes at the buffer/absorber interface. We find a similar interface recombination probability of about 40% for both devices, those with a ZnSe buffer layer and those with a CdS buffer layer. An anomalous enhancement of the quantum efficiency measured under current bias is ascribed to a barrier modulation effect which is caused by light absorbed in the buffer layer.

57 citations

Journal ArticleDOI
TL;DR: In this article, photo assisted MOCVD was used to achieve deposition temperatures well below 300°C and deposition times not much longer than 3 min. Higher temperatures and longer deposition times lead to absorber degradation.

36 citations

Journal ArticleDOI
26 Sep 2008-Vacuum
TL;DR: In this article, the properties of polycrystalline ZnSe films are characterized by photoluminescence spectra and the dependence of film properties on various substrate temperatures and Se/Zn BEP ratios has been discussed in detail.

23 citations

Journal ArticleDOI
TL;DR: In this article, the best growth condition was identified by analyzing characteristics such as the full width at half-maximum and peak intensity of the (111) preferred orientation in X-ray diffraction patterns.

12 citations