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Edith Bourret-Courchesne
Researcher at Lawrence Berkeley National Laboratory
Publications - 110
Citations - 2853
Edith Bourret-Courchesne is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Scintillation & Scintillator. The author has an hindex of 27, co-authored 107 publications receiving 2568 citations. Previous affiliations of Edith Bourret-Courchesne include University of California.
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The quest for the ideal inorganic scintillator
TL;DR: In this paper, the authors describe how suitably doped semiconductor scintillators could provide a combination of high light output, short decay time, and linearity of response that approach fundamental limits.
Journal ArticleDOI
Needs, Trends, and Advances in Inorganic Scintillators
Christophe Dujardin,Etiennette Auffray,Edith Bourret-Courchesne,Pieter Dorenbos,Paul Lecoq,Martin Nikl,Andrey N. Vasil’ev,Akira Yoshikawa,Ren-Yuan Zhu +8 more
TL;DR: In this paper, the authors present new developments in inorganic scintillators widely used for radiation detection. And they address major emerging research topics outlining current needs for applications and material sciences issues with the overall aim to provide an up-to-date picture of the field.
Journal Article
The quest for the ideal inorganic scintillator
TL;DR: In this article, the authors describe how suitably doped semiconductor scintillators could provide a combination of high light output, short decay time, and linearity of response that approach fundamental limits.
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Eu2+-doped Ba2CsI5, a new high-performance scintillator
Edith Bourret-Courchesne,Gregory Bizarri,Ramesh B. Borade,Zewu Yan,Stephen M. Hanrahan,Gautam Gundiah,Anurag Chaudhry,Anurag Chaudhry,Andrew Canning,S.E. Derenzo +9 more
TL;DR: The crystal growth and scintillation properties of Ba 2 CsI 5 :Eu 2+ are reported in this article, where the vertical Bridgman technique is used to produce a very high performance scintillator.
Journal ArticleDOI
Growth and morphology of 0.80 eV photoemitting indium nitride nanowires
M.C. Johnson,C. J. Lee,Edith Bourret-Courchesne,S. L. Konsek,Shaul Aloni,Wei-Qiang Han,Alex Zettl +6 more
TL;DR: InN nanowires with high efficiency photoluminescence emission at 0.80eV are reported in this paper, which consist of only hexagonal wurtzite phase InN.