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Emanuele Centurioni

Bio: Emanuele Centurioni is an academic researcher. The author has contributed to research in topics: Sheet resistance & Electrical resistivity and conductivity. The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

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TL;DR: In this paper, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annaling time in the range 5-25 min.
Abstract: This study shows that, after annealing at 1950°C, a 1×1020 cm-3 Al+ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.

2 citations


Cited by
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TL;DR: In this article, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss.
Abstract: In this paper, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss. The proposed structure is explored and compared with the conventional IGBT using ATLAS. The simulation results have indicated that the reduction in turn-off energy loss is more than 88%, with a slight degradation in the ${I}$ – ${V}$ characteristics. Concurrently, with the same on-state voltage drop, the turn-off loss is reduced by a figure of 84%.

12 citations

Journal ArticleDOI
TL;DR: In this article, the authors confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5× 1020 cm 3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing.
Abstract: In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples

5 citations