Emanuele Rimini

Bio: Emanuele Rimini is an academic researcher from University of Catania. The author has contributed to research in topics: Silicon & Amorphous solid. The author has an hindex of 39, co-authored 352 publications receiving 6390 citations. Previous affiliations of Emanuele Rimini include Polytechnic University of Milan.

Ion Beam Handbook for Material Analysis

Abstract: Ion Beam Handbook for Material Analysis emerged from the U.S.-Italy Seminar on Ion Beam Analysis of Near Surface Regions held at the Baia-Verde Hotel, Catania, June 17-20, 1974. The seminar was sponsored by the National Science Foundation and the Consiglio Nazionale delle Ricerche under the United States-Italy Cooperative Science Program. The book provides a useful collection of tables, graphs, and formulas for those involved in ion beam analysis. These tables, graphs, and formulas are divided into five chapters that cover the following topics: energy loss and energy straggling; backscattering spectrometry; channeling; applications of ion-induced nuclear reactions; and the use of ion-induced X-ray yields.

A melting model for pulsing‐laser annealing of implanted semiconductors

Abstract: The transition to single crystal of ion‐implanted amorphous Si and Ge layers is described in terms of a liquid‐phase epitaxy occurring during pulsing‐laser irradiation. A standard heat equations including laser light absorption was solved numerically to give the time evolution of temperature and melting as a function of the pulse energy density and its duration. The structure dependence of the absorption coefficient and the temperature dependence of the thermal conductivity were accounted for in the calculations. In this model the transition to single crystal occurs above a well‐defined threshold energy density at which the liquid layer wets the underlying single‐crystal substrate. Experiments were performed in ion‐implanted amorphous layers of thicknesses ranging between 500 and 9000 A. The energy densities of the Q‐switched ruby laser ranged between 0.2 and 3.5 J/cm2; time durations of 20 and 50 ns were used. The experimental data are in good agreement with the calculated values for the amorphous thickness–energy−density threshold. The model deals mainly with plausibility arguments and does not account for processes occuring in the near‐threshold region or below the melting temperature.

Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements

Abstract: The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen or oxygen The dependence of the electrical resistivity and structure on the annealing temperature and time has been investigated in samples with different dopant concentrations Enhancement of the thermal stability and increase of the mobility gap for conduction have been observed in O- and N-doped amorphous Ge2Sb2Te5 Larger effects have been found in the case of nitrogen doping

Ion Implantation: Basics to Device Fabrication

Abstract: Preface. List of Tables. 1. Semiconductor Devices. 2. Ion Implanters. 3. Range Distribution. 4. Radiation Damage. 5. Annealing and Secondary Defects. 6. Analytical Techniques. 7. Silicon Based Devices. 8. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis. Selected References. References. Index.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

Abstract: We report values of pseudodielectric functions $〈\ensuremath{\epsilon}〉=〈{\ensuremath{\epsilon}}_{1}〉+i〈{\ensuremath{\epsilon}}_{2}〉$ measured by spectroscopic ellipsometry and refractive indices $\stackrel{\ifmmode \tilde{}\else \~{}\fi{}}{n}=n+ik$, reflectivities $R$, and absorption coefficients $\ensuremath{\alpha}$ calculated from these data. Rather than correct ellipsometric results for the presence of overlayers, we have removed these layers as far as possible using the real-time capability of the spectroscopic ellipsometer to assess surface quality during cleaning. Our results are compared with previous data. In general, there is good agreement among optical parameters measured on smooth, clean, and undamaged samples maintained in an inert atmosphere regardless of the technique used to obtain the data. Differences among our data and previous results can generally be understood in terms of inadequate sample preparation, although results obtained by Kramers-Kronig analysis of reflectance measurements often show effects due to improper extrapolations. The present results illustrate the importance of proper sample preparation and of the capability of separately determining both ${\ensuremath{\epsilon}}_{1}$ and ${\ensuremath{\epsilon}}_{2}$ in optical measurements.

Structural defects in graphene

Abstract: Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth or processing, deteriorate the performance of graphene-based devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed. Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices with dedicated properties are also discussed.

Ultrahigh-power micrometre-sized supercapacitors based on onion-like carbon

Abstract: Electrochemical capacitors, also called supercapacitors, store energy in two closely spaced layers with opposing charges, and are used to power hybrid electric vehicles, portable electronic equipment and other devices¹. By offering fast charging and discharging rates, and the ability to sustain millions of ²⁻⁵, electrochemical capacitors bridge the gap between batteries, which offer high energy densities but are slow, and conventional electrolytic capacitors, which are fast but have low energy densities. Here, we demonstrate microsupercapacitors with powers per volume that are comparable to electrolytic capacitors, capacitances that are four orders of magnitude higher, and energies per volume that are an order of magnitude higher. We also measured discharge rates of up to 200 V s⁻¹, which is three orders of magnitude higher than conventional supercapacitors. The microsupercapacitors are produced by the electrophoretic deposition of a several micrometre-thick layer of nanostructured carbon onions⁶‚⁷ with diameters of 6-7 nm. Integration of these nanoparticles in a microdevice with a high surface-to-volume ratio, without the use of organic binders and polymer separators, improves performance because of the ease with which ions can access the active material. Increasing the energy density and discharge rates of supercapacitors will enable them to compete with batteries and conventional electrolytic capacitors in a number of applications.

Measurement of the quantum capacitance of graphene.

Abstract: Graphene has received widespread attention due to its unique electronic properties. Much of the research conducted so far has focused on electron mobility, which is determined by scattering from charged impurities and other inhomogeneities. However, another important quantity, the quantum capacitance, has been largely overlooked. Here, we report a direct measurement of the quantum capacitance of graphene as a function of gate potential using a three-electrode electrochemical configuration. The quantum capacitance has a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. Our findings -- which are not predicted by theory for ideal graphene -- suggest that charged impurities also influences the quantum capacitance. We also measured the capacitance in aqueous solutions at different ionic concentrations, and our results strongly indicate that the long-standing puzzle about the interfacial capacitance in carbon-based electrodes has a quantum origin.