Network Analysis: Methodological Foundations

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Noah

Thermal characterizations and modeling have been carried out on a $0.15~\mu \text{m} \,\, \times $ ( $4 \times 50$ ) $\mu \text{m}$ gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from −40 °C to 150 °C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current $I_{\mathrm {ds}}$ expression is acquired by combining the zone division method and the surface potential theory. The proposed $I_{\mathrm {ds}}$ model only contains 19 empirical parameters, with self-heating, ambient temperature and trapping effects considered. The self-heating effects are modeled by a polynomial function of temperature and gate voltage for the critical electric field $E_{c}$ . And the ambient temperature effects are modeled by modifying pinchoff voltage and maximal electron saturated velocity. The trapping effects are considered with an effective gate–source voltage method. Moreover, taking the advantage of good physical meaning, the proposed $I_{\mathrm {ds}}$ model is scalable. In house 0.15- $\mu \text{m}$ GaN HEMTs with different sizes are used to validate the model by dc $I$ – $V$ over a wide ambient temperature range, pulsed $I$ – $V$ , multibias S-parameters up to 50 GHz and multibias large-signal characteristics at $f_{0} = 30$ GHz. The good results show that the proposed quasi-physical zone division model is useful for millimeter-wave GaN HEMTs development and circuit design.

A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs

Thermal and small-signal model parameters analysis have been carried out on 0.5 μm × (2 × 100 μm) AlGaAs/GaAs HEMT grown on semi-insulating GaAs substrate and 0.25 μm × (2 × 100 μm) AlGaN/GaN HEMT grown on SiC substrate. Two different technologies are investigated in order to establish a detailed understanding of their capabilities in terms of frequency and temperature using on-wafer S-parameter measurement over the temperature range from −40 to 150 °C up to 50 GHz. The equivalent circuit parameters as well as their temperature-dependent behavior of the two technologies were analyzed and discussed for the first time. The principle elevation or degradation of transistor parameters with temperature demonstrates the great potential of GaN device for high frequency and high temperature applications. The result provides some valuable insights for future design optimizations of advanced GaN and a comparison of this with the GaAs technology.

Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications

The development of remote control technology has grown rapidly along with the development of communication technology nowadays. The simplest communication technology available is by using GSM protocol. In this paper, a prototype of electric appliance control tool via SMS by using GSM is proposed. GSM protocol was chosen because it does not depend on mobile devices' platform. GSM SIM 900 and Arduino for controlling a relay module were utilized here. Relay module worked in accordance with orders given through SMS and the mobile device then received the feedback of the command. For testing purpose, ten (10) different types of input string as a command control was proceed. Relay worked according to orders sent from the input string submitted and feedback messages from the command given previously was provided.

Electrical appliances control prototype by using GSM module and Arduino

Future of data mining is the social network mining, especially in connection with the web pages, will incorporate the network timeline that are generated with social network extraction. This approach we use to deal with dynamic and process of evolution in networks. Although there is an increasing interest about the social network analysis, but a little of them has a significant impact to social substructures mining. Therefore this paper proposes the mining of social network based on unit analysis in social network analysis to build a network: vertex and edge. In study we used multiple regression to determine the relations of resources of networks, but we explore naturally formal relation of vertices and edges like leadership of an author, and then we explained in experiments. So there is the role of each actor in the social networks.

An extracted social network mining

Temperature effect modelling and analysis have been carried out on 0.15 �m and 0.25 �m gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 1500C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters (ECPs) including ft and fmax were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.

Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application

An accurate information can be useful for authorities to make good policies for preventive and mitigation after volcano eruption disaster. Monitoring of environmental parameters of post-eruption volcano provides an important information for authorities. Such monitoring system can be develop using the Wireless Network Sensor technology. Many application has been developed using the Wireless Sensor Network technology, such as floods early warning system, sun radiation mapping, and watershed monitoring. This paper describes the implementation of a remote environment monitoring system of mount Sinabung post-eruption. The system monitor three environmental parameters: soil condition, water quality and air quality (outdoor). Motes equipped with proper sensors, as components of the monitoring system placed in sample locations. The measured value from the sensors periodically sends to data server using 3G/GPRS communication module. The data can be downloaded by the user for further analysis.The measurement and data analysis results generally indicate that the environmental parameters in the range of normal/standard condition. The sample locations are safe for living and suitable for cultivation, but awareness is strictly required due to the uncertainty of Sinabung status.

http://iopscience.iop.org/article/10.1088/1742-6596/801/1/012084/pdf

Remote Monitoring of Post-eruption Volcano Environment Based-On Wireless Sensor Network (WSN): The Mount Sinabung Case

In this paper the intrinsic transconductance, output current, output power and their nonlinear derivatives are analyzed for double and single channel HEMTs. It is shown that the distortion products weakly depend on device's gate width dimension. Conversely, it is strongly affected by the 2DEG sheets in the quantum wells. The more the number of device's active channels, the higher the current and subsequently the lower the percentage of distortion. As the input power level increases, the amplitude of the input signal increases and the this adds to input voltage of the device which controls the thickness of the layer where the electrons flow. This affects the output levels, leading the notch of third order harmonic to appear at higher output current.

http://ieeexplore.ieee.org/iel5/6089237/6102757/06102909.pdf

Emerson P. Sinulingga

Papers

Electrical appliances control prototype by using GSM module and Arduino

An extracted social network mining

Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application

Remote Monitoring of Post-eruption Volcano Environment Based-On Wireless Sensor Network (WSN): The Mount Sinabung Case

Nonlinearity study of double and single channel GaAs HEMTs