scispace - formally typeset
E

Enakshi Bhattacharya

Researcher at Indian Institute of Technology Madras

Publications -  83
Citations -  939

Enakshi Bhattacharya is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Silicon & Surface micromachining. The author has an hindex of 14, co-authored 80 publications receiving 873 citations. Previous affiliations of Enakshi Bhattacharya include Indian Institutes of Technology & Tata Institute of Fundamental Research.

Papers
More filters

Potentiometric biosensors based on silicon and porous silicon

TL;DR: In this article, a potentiometric biosensors with silicon for the estimation of triglycerides and urea based on enzymatic reactions is reported, which shows a shift in the measured CV with changes in the pH of the electrolyte.
Proceedings ArticleDOI

Electrical measurement of undercut in surface micromachining

TL;DR: In this paper, two polysilicon resistors of different lengths and width are used and the undercut is extracted from the ratio of the measured resistances, for a given length, the ratio between the measured frequencies for the two widths gives the value of============Undercut.
Proceedings ArticleDOI

Contact angle measurements on polysilicon for surface micromachining applications

TL;DR: In this paper, contact angle measurements on polysilicon surface after different treatments are reported with a view to understand their stiction behavior, and they also report on surface roughness measurements on these samples.
Proceedings ArticleDOI

Experimental demonstration of negative differential capacitance in a voltage controlled electrostatic actuator

TL;DR: In this paper, an electrostatic actuator, which is the fundamental building block of SGFET, was fabricated using surface micromachining technique, and the actuator was stabilized beyond the pull-in instability limit.
Journal ArticleDOI

Space charge limited currents and the statistical shift in amorphous semiconductors

TL;DR: In this article, it was shown that there is a correlation between statistical shift and space charge limited current, and it is possible to make an estimate of the coefficient of statistical shift without actually knowing the details of the distribution of gap states.