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Enakshi Bhattacharya
Researcher at Indian Institute of Technology Madras
Publications - 83
Citations - 939
Enakshi Bhattacharya is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Silicon & Surface micromachining. The author has an hindex of 14, co-authored 80 publications receiving 873 citations. Previous affiliations of Enakshi Bhattacharya include Indian Institutes of Technology & Tata Institute of Fundamental Research.
Papers
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Potentiometric biosensors based on silicon and porous silicon
TL;DR: In this article, a potentiometric biosensors with silicon for the estimation of triglycerides and urea based on enzymatic reactions is reported, which shows a shift in the measured CV with changes in the pH of the electrolyte.
Proceedings ArticleDOI
Electrical measurement of undercut in surface micromachining
TL;DR: In this paper, two polysilicon resistors of different lengths and width are used and the undercut is extracted from the ratio of the measured resistances, for a given length, the ratio between the measured frequencies for the two widths gives the value of============Undercut.
Proceedings ArticleDOI
Contact angle measurements on polysilicon for surface micromachining applications
Enakshi Bhattacharya,U. Venu Babu,L. Helen Anitha Rani,P. Pradeep,Parimi Ramaseshagiri Rao,K.N. Bhat +5 more
TL;DR: In this paper, contact angle measurements on polysilicon surface after different treatments are reported with a view to understand their stiction behavior, and they also report on surface roughness measurements on these samples.
Proceedings ArticleDOI
Experimental demonstration of negative differential capacitance in a voltage controlled electrostatic actuator
TL;DR: In this paper, an electrostatic actuator, which is the fundamental building block of SGFET, was fabricated using surface micromachining technique, and the actuator was stabilized beyond the pull-in instability limit.
Journal ArticleDOI
Space charge limited currents and the statistical shift in amorphous semiconductors
TL;DR: In this article, it was shown that there is a correlation between statistical shift and space charge limited current, and it is possible to make an estimate of the coefficient of statistical shift without actually knowing the details of the distribution of gap states.