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Author

Eric A.M. Klumperink

Other affiliations: Philips, MediaTek, Analog Devices  ...read more
Bio: Eric A.M. Klumperink is an academic researcher from University of Twente. The author has contributed to research in topics: CMOS & Noise figure. The author has an hindex of 49, co-authored 286 publications receiving 9458 citations. Previous affiliations of Eric A.M. Klumperink include Philips & MediaTek.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, a feed-forward noise-canceling technique is proposed to cancel the noise and distortion contributions of the matching device, which allows for designing wide-band impedance-matching amplifiers with noise figure (NF) well below 3 dB.
Abstract: Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.

749 citations

Journal ArticleDOI
TL;DR: It is shown that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDs(V GS) relation at practical gain values.
Abstract: An inductorless low-noise amplifier (LNA) with active balun is proposed for multi-standard radio applications between 100 MHz and 6 GHz. It exploits a combination of a common-gate (CGH) stage and an admittance-scaled common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a noise figure (NF) close to or below 3 dB can be achieved, while good linearity is possible when the CS-stage is carefully optimized. We show that a CS-stage with deep submicron transistors can have high IIP2, because the nugsldr nuds cross-term in a two-dimensional Taylor approximation of the IDS(VGS, VDS) characteristic can cancel the traditionally dominant square-law term in the IDS(VGS) relation at practical gain values. Using standard 65 nm transistors at 1.2 V supply voltage, we realize a balun-LNA with 15 dB gain, NF +20 dBm, while simultaneously achieving an IIP3 > 0 dBm. The best performance of the balun is achieved between 300 MHz to 3.5 GHz with gain and phase errors below 0.3 dB and plusmn2 degrees. The total power consumption is 21 mW, while the active area is only 0.01 mm2.

579 citations

Journal ArticleDOI
05 Apr 2011
TL;DR: Using a linear periodically time-variant (LPTV) model, exact expressions for the filter transfer function are derived and the behavior of the circuit including non-idealities such as maximum rejection, spectral aliasing, noise and effects due to mismatch in the paths is modeled and verified via measurements.
Abstract: A differential single-port switched-RC N-path filter with band-pass characteristic is proposed. The switching frequency defines the center frequency, while the RC-time and duty cycle of the clock define the bandwidth. This allows for high-Q highly tunable filters which can for instance be useful for cognitive radio. Using a linear periodically time-variant (LPTV) model, exact expressions for the filter transfer function are derived. The behavior of the circuit including non-idealities such as maximum rejection, spectral aliasing, noise and effects due to mismatch in the paths is modeled and verified via measurements. A simple RLC equivalent circuit is provided, modeling bandwidth, quality factor and insertion loss of the filter. A 4-path architecture is realized in 65 nm CMOS. An off-chip transformer acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity around even harmonics of the clock. The filter has a constant -3 dB bandwidth of 35 MHz and can be tuned from 100 MHz up to 1 GHz. Over the whole band, IIP3 is better than 14 dBm, P1dB=2 dBm and the noise figure is 3-5 dB, while the power dissipation increases from 2 mW to 16 mW (only clocking power).

378 citations

Journal ArticleDOI
TL;DR: This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller.
Abstract: This paper presents a 10 bit successive approximation ADC in 65 nm CMOS that benefits from technology scaling. It meets extremely low power requirements by using a charge-redistribution DAC that uses step-wise charging, a dynamic two-stage comparator and a delay-line-based controller. The ADC requires no external reference current and uses only one external supply voltage of 1.0 V to 1.3 V. Its supply current is proportional to the sample rate (only dynamic power consumption). The ADC uses a chip area of approximately 115×225 μm2. At a sample rate of 1 MS/s and a supply voltage of 1.0 V, the 10 bit ADC consumes 1.9 μW and achieves an energy efficiency of 4.4 fJ/conversion-step.

377 citations

Journal ArticleDOI
TL;DR: A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented and an accurate multiphase clock generator is presented for a mismatch-robust HR.
Abstract: A software-defined radio (SDR) receiver with improved robustness to out-of-band interference (OBI) is presented. Two main challenges are identified for an OBI-robust SDR receiver: out-of-band nonlinearity and harmonic mixing. Voltage gain at RF is avoided, and instead realized at baseband in combination with low-pass filtering to mitigate blockers and improve out-of-band IIP3. Two alternative ?iterative? harmonic-rejection (HR) techniques are presented to achieve high HR robust to mismatch: a) an analog two-stage polyphase HR concept, which enhances the HR to more than 60 dB; b) a digital adaptive interference cancelling (AIC) technique, which can suppress one dominating harmonic by at least 80 dB. An accurate multiphase clock generator is presented for a mismatch-robust HR. A proof-of-concept receiver is implemented in 65 nm CMOS. Measurements show 34 dB gain, 4 dB NF, and + 3.5 dBm in-band IIP3 while the out-of-band IIP3 is +16 dBm without fine tuning. The measured RF bandwidth is up to 6 GHz and the 8-phase LO works up to 0.9 GHz (master clock up to 7.2 GHz). At 0.8 GHz LO, the analog two-stage polyphase HR achieves a second to sixth order HR > 60 dB over 40 chips, while the digital AIC technique achieves HR > 80 dB for the dominating harmonic. The total power consumption is 50 mA from a 1.2 V supply.

318 citations


Cited by
More filters
Journal ArticleDOI
01 Dec 1983-Nature
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1,146 citations

01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

912 citations

Journal ArticleDOI
TL;DR: In this article, a feed-forward noise-canceling technique is proposed to cancel the noise and distortion contributions of the matching device, which allows for designing wide-band impedance-matching amplifiers with noise figure (NF) well below 3 dB.
Abstract: Known elementary wide-band amplifiers suffer from a fundamental tradeoff between noise figure (NF) and source impedance matching, which limits the NF to values typically above 3 dB. Global negative feedback can be used to break this tradeoff, however, at the price of potential instability. In contrast, this paper presents a feedforward noise-canceling technique, which allows for simultaneous noise and impedance matching, while canceling the noise and distortion contributions of the matching device. This allows for designing wide-band impedance-matching amplifiers with NF well below 3 dB, without suffering from instability issues. An amplifier realized in 0.25-/spl mu/m standard CMOS shows NF values below 2.4 dB over more than one decade of bandwidth (i.e., 150-2000 MHz) and below 2 dB over more than two octaves (i.e., 250-1100 MHz). Furthermore, the total voltage gain is 13.7 dB, the -3-dB bandwidth is from 2 MHz to 1.6 GHz, the IIP2 is +12 dBm, and the IIP3 is 0 dBm. The LNA drains 14 mA from a 2.5-V supply and the die area is 0.3/spl times/0.25 mm/sup 2/.

749 citations

Journal ArticleDOI
TL;DR: An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter using a 0.18-/spl mu/m CMOS process achieves a power gain of 9.3 dB with an input match of -10 dB over the band.
Abstract: An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.

714 citations

Proceedings ArticleDOI
18 Jun 2007
TL;DR: A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupled stage, which enables fast operation over a wide common-mode and supply voltage range as discussed by the authors.
Abstract: A latch-type voltage sense amplifier in 90nm CMOS is designed with a separated input and cross-coupled stage. This separation enables fast operation over a wide common-mode and supply voltage range. With a 1-sigma offset of 8mV, the circuit consumes 92fJ/decision with a 1.2V supply. It has an input equivalent noise of 1.5mV and requires 18ps setup-plus-hold time

587 citations