E
Eric Feltin
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 141
Citations - 6616
Eric Feltin is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Quantum well & Epitaxy. The author has an hindex of 41, co-authored 141 publications receiving 6233 citations. Previous affiliations of Eric Feltin include École Normale Supérieure & Centre national de la recherche scientifique.
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Journal ArticleDOI
Room-temperature polariton lasing in semiconductor microcavities.
Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Pavlos G. Lagoudakis,Alexey Kavokin,Jeremy J. Baumberg,Gabriel Christmann,Raphaël Butté,Eric Feltin,J.-F. Carlin,Nicolas Grandjean +10 more
TL;DR: Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.
Journal ArticleDOI
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
Journal ArticleDOI
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
TL;DR: In this article, room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field effect transistor heterostructure.
Journal ArticleDOI
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Eric Feltin,Bernard Beaumont,M. Laügt,P. de Mierry,Philippe Vennéguès,Hacene Lahreche,Mathieu Leroux,Pierre Gibart +7 more
TL;DR: In this article, the insertion of AlN/GaN superlattices was found to decrease the stress sufficiently for avoiding crack formation in an overgrown (2.5 μm) GaN layer.
Journal ArticleDOI
Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity
TL;DR: In this article, room temperature polariton lasing at λ∼345nm in a hybrid AlInN∕AlGaN multiple quantum well microcavity (MQW-MC) was reported.