Eric R. Heller

Bio: Eric R. Heller is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 24, co-authored 88 publications receiving 2523 citations. Previous affiliations of Eric R. Heller include University of Alabama in Huntsville & Wright State University.

Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint)

Abstract: : In this paper, we present a coupled small-scale electrothermal model for characterizing AlGaN/GaN HEMTs under direct current (DC) and alternating current (AC) power conditions for various duty cycles. The calculated electrostatic potential and internal heat generation data are then used in a large-scale mechanics model to determine the development of stress due to the inverse piezoelectric and thermal expansion effects. The electrical characteristics of the modeled device were compared to experimental measurements for validation as well as existing simulation data from literature. The results show that the operating conditions (bias applied and AC duty cycle) strongly impact the temperature within the device and the stress fluctuations during cyclic pulsing conditions. The peak stress from the inverse piezoelectric effect develops rapidly with applied bias and slowly relaxes as the joule heating increases the device temperature during the on state of the pulse leading to cyclic stresses in operation of AlGaN/GaN HEMTs.

Spin Crossover of Thiophosgene via Multidimensional Heavy-Atom Quantum Tunneling.

Abstract: The spin-crossover reaction of thiophosgene has drawn broad attention from both experimenters and theoreticians as a prime example of radiationless intramolecular decay via intersystem crossing. Despite multiple attempts over 20 years, theoretical predictions have typically been orders of magnitude in error relative to the experimentally measured triplet lifetime. We address the T1 → S0 transition by the first application of semiclassical golden-rule instanton theory in conjunction with on-the-fly electronic-structure calculations based on multireference perturbation theory. Our first-principles approach provides excellent agreement with the experimental rates. This was only possible because instanton theory goes beyond previous methods by locating the optimal tunneling pathway in full dimensionality and thus captures "corner cutting" effects. Since the reaction is situated in the Marcus inverted regime, the tunneling mechanism can be interpreted in terms of two classical trajectories, one traveling forward and one backward in imaginary time, which are connected by particle-antiparticle creation and annihilation events. The calculated mechanism indicates that the spin crossover is sped up by many orders of magnitude due to multidimensional quantum tunneling of the carbon atom even at room temperature.

Interdependence of Electronic and Thermal Transport in Al x Ga 1–x N Channel HEMTs

Abstract: Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.

Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging

Abstract: The development of high-quality gallium nitride (GaN) high electron mobility transistors (HEMTs) has provided opportunities for the next generation of high-performance radio frequency and power electronics. Operating devices with smaller length scales at higher voltages result in excessively high channel temperatures, which reduce performance and can have detrimental effects on the device's reliability. The thermal characterization of GaN HEMTs has traditionally been captured from either the top or bottom side of the device. Under this configuration, it has been possible to map the lateral temperature distribution across the device with optical methods such as infrared and Raman thermometry. Due to the presence of the gate metal, however, and often also the addition of a metal air bridge and/or field plate, the temperature of the GaN channel under the gate is typically inferred by numerical simulations. Furthermore, measuring the vertical temperature gradient across multiple epitaxial layers has shown to be challenging. This study proposes a new cross-sectional imaging technique to map the vertical temperature distribution in GaN HEMTs. Combining advanced cross-sectioning processing with the recently developed near bandgap transient thermoreflectance imaging technique, the full transient thermal distribution across a GaN HEMT is achieved. The cross-sectional thermal imaging of the GaN channel is used to study the effects of biasing on the Joule heating profile. Overall, the direct measurement of the GaN channel, capturing both the vertical and lateral gradient, will provide deeper insight into the device's degradation physics and supply further experimental data to validate previously developed electrothermal models.

Characterization of Cross-Sectioned Gallium Nitride High-Electron-Mobility Transistors with In Situ Biasing

Abstract: AlGaN/GaN high-electron-mobility transistors (HEMTs) were characterized in cross-section by Kelvin probe force microscopy (KPFM) during in situ biasing. The HEMTs used in this study were specially designed to maintain full and representative transistor functionality after cross-sectioning perpendicular to the gate width dimension to expose the active channel from source to drain. A cross-sectioning procedure was established that produces samples with high-quality surfaces and minimal degradation in initial transistor performance. A detailed description of the cross-sectioning procedure is provided. Samples were characterized by KPFM, effectively mapping the surface potential of the device in two-dimensional cross-section, including under metallization layers (i.e., gate, field plates, and ohmic contacts). Under the gate and field plate layers are where electric field, temperature, and temperature gradients are all most commonly predicted to have peak values, and where degradation and failure are most likely, and so this is where direct measurements are most critical. In this work, the surface potential of the operating device was mapped in cross-section by KPFM. Charge redistribution was observed during and after biasing, and the surface potential was seen to decay with time back to the prebias condition. This work is a first step toward directly mapping and localizing the steady-state and transient charge distribution due to point defects (traps) before, during, and after device operation, including normally inaccessible regions such as under metallization layers. Such measurements have not previously been demonstrated for GaN HEMT technology.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

A review of Ga2O3 materials, processing, and devices

Abstract: Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (e) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Abstract: J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons