E
Eric R. Heller
Researcher at Wright-Patterson Air Force Base
Publications - 88
Citations - 3503
Eric R. Heller is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 24, co-authored 88 publications receiving 2523 citations. Previous affiliations of Eric R. Heller include University of Alabama in Huntsville & Wright State University.
Papers
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Journal ArticleDOI
Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices
Nicholas R. Glavin,Kelson D. Chabak,Eric R. Heller,Elizabeth A. Moore,Timothy A. Prusnick,Benji Maruyama,Dennis E. Walker,Donald L. Dorsey,Qing Paduano,Michael Snure +9 more
TL;DR: The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain.
Journal ArticleDOI
Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
TL;DR: In this article, a comparative analysis of the residual stress distributions across the conductive channel of Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented.
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Lateral β-Ga2O3 field effect transistors
Kelson D. Chabak,Kevin D. Leedy,Andrew J. Green,Shin Mou,Adam T. Neal,Thaddeus J. Asel,Eric R. Heller,Nolan S. Hendricks,Kyle J. Liddy,Antonio Crespo,Nicholas C. Miller,Miles Lindquist,Neil Moser,Robert C. Fitch,Dennis E. Walker,Donald L. Dorsey,Gregg H. Jessen +16 more
TL;DR: In this article, a review of BGO epitaxial materials and lateral field effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
Journal ArticleDOI
Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features
TL;DR: In this paper, micro-Raman spectroscopy was used to measure temperature and stress in state-of-the-art AlGaN/GaN HEMTs.
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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
Neil Moser,Jonathan McCandless,Antonio Crespo,Kevin D. Leedy,Andrew J. Green,Eric R. Heller,Kelson D. Chabak,Nathalia Peixoto,Gregg H. Jessen +8 more
TL;DR: In this paper, the authors report on Sn-doped β-Ga2O3 MOSFETs with as-grown carrier concentrations from 0.7 to 1.6 and a fixed channel thickness of 200 nm.