E
Eric R. Heller
Researcher at Wright-Patterson Air Force Base
Publications - 88
Citations - 3503
Eric R. Heller is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 24, co-authored 88 publications receiving 2523 citations. Previous affiliations of Eric R. Heller include University of Alabama in Huntsville & Wright State University.
Papers
More filters
Proceedings ArticleDOI
High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging
Kerry Maize,Georges Pavlidis,Eric R. Heller,Luke Yates,Dustin Kendig,Samual Graham,Ali Shakouri +6 more
TL;DR: In this article, self-heating in gallium nitride based high frequency, high electron mobility power transistors (GaN HEMTs) is inspected using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging.
Journal ArticleDOI
Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Georges Pavlidis,Spyridon Pavlidis,Eric R. Heller,Elizabeth A. Moore,Ramakrishna Vetury,Samuel Graham +5 more
TL;DR: In this article, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors under various bias conditions.
Journal ArticleDOI
Thermal characterization of gallium oxide Schottky barrier diodes.
Bikramjit Chatterjee,Asanka Jayawardena,Eric R. Heller,David W. Snyder,Sarit Dhar,Sukwon Choi +5 more
TL;DR: Results of this study suggest that electro-thermal co-design techniques and top-side thermal management solutions are necessary to exploit the full potential of the Ga2O3 material system.
Journal ArticleDOI
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
TL;DR: In this article, the authors used transient thermoreflectance imaging (TTI) to measure the temperature rise of the passivated gate metal measured by TTI and the averaged gate temperature monitored by gate resistance thermometry (GRT).
Proceedings ArticleDOI
Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs
Aaron R. Arehart,A. Sasikumar,Glen D. Via,B. Winningham,B. Poling,Eric R. Heller,Steven A. Ringel +6 more
TL;DR: In this paper, constant drain-current deep level optical/transient spectroscopy (CI D -DLTS/DLOS) methods to quantify trap energies and concentrations in AlGaN/GaN high electron mobility transistors (HEMTs) are described.