Eugene Deyneka

Bio: Eugene Deyneka is an academic researcher from Cree Inc.. The author has contributed to research in topics: Micropipe & Epitaxy. The author has an hindex of 5, co-authored 5 publications receiving 137 citations.

Bulk Growth of Large Area SiC Crystals

Abstract: The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.

100 mm 4HN-SiC Wafers with Zero Micropipe Density

Abstract: Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes. Crystal growth studies for 3-inch material with similar processes have demonstrated a 1c screw dislocation median density of 175 cm-2, compared to typical densities of 2x103 to 4x103 cm-2 in current production wafers. These values were obtained through optical scanning analyzer methods and verified by x-ray topography.

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor

Abstract: Initial results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased areal throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Growth rates of 20 micron/hr and short

Defect Status in SiC Manufacturing

Abstract: Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, which have been achieved only through significant advances in substrate and epitaxial layer quality. Cree has established viable materials technologies to attain these qualities on production wafers and further developments are imminent. Zero micropipe (ZMP) 100 mm 4HN-SiC substrates are commercially available and 1c dislocations densities were reduced to values as low as 175 cm-2. On these low defect substrates we have achieved repeatable production of thick epitaxial layers with defect densities of less than 1 cm-2 and as low as 0.2 cm-2. These accomplishments rely on precise monitoring of both material and manufacturing induced defects. Selective etch techniques and an optical surface analyzer is used to inspect these defects on our wafers. Results were verified by optical microscopy and x-ray topography.

Dislocation Characterization in 4H-SiC Crystals

Abstract: Definitive correlations are presented between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates. A variety of etch conditions and the results on different faces of SiC substrates and epiwafers are examined. Hillocks formed on the carbon face of the substrate after KOH etching correlate very well to TSDs identified via SWBXRT. Topography of substrates and of vertical crystal slices reveals a large proportion of Threading Mixed character Dislocations (TMDs) in the population of Threading Screw Dislocations.

Silicon carbide semiconductor device

Abstract: This silicon-carbide semiconductor device (101) has a silicon-carbide substrate (10), a main electrode (52), a first barrier layer (70a), and a wiring layer (60). The main electrode (52) is provided directly on top of the silicon-carbide substrate (10). The first barrier layer (70a) is provided on top of the main electrode (52) and is made from a conductive material that does not contain aluminum. The wiring layer (60) is provided on top of the first barrier layer (70a), is isolated from the main electrode (52) by the first barrier layer (70a), and is made from a material that does contain aluminum.

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Abstract: The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects. DOI:https://doi.org/10.1103/PhysRevX.7.021046 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI. Published by the American Physical Society