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Eun-Jung Yoon
Researcher at Samsung
Publications - 23
Citations - 825
Eun-Jung Yoon is an academic researcher from Samsung. The author has contributed to research in topics: MOSFET & Transistor. The author has an hindex of 13, co-authored 23 publications receiving 793 citations.
Papers
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Proceedings ArticleDOI
High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability
Sung Dae Suk,Sung-young Lee,Sung-min Kim,Eun-Jung Yoon,Min-Sang Kim,Ming Li,Chang Woo Oh,Kyoung Hwan Yeo,Sung Hwan Kim,Dong-Suk Shin,Kwan-Heum Lee,Heungsik Park,Jeorig Nam Han,Choong-Hee Park,Jong-Bong Park,Dong-Won Kim,Donggun Park,Byung-Il Ryu +17 more
TL;DR: For the first time, a gate-all-around twin silicon nanowire transistor (TSNWFET) was successfully fabricated on bulk Si wafer using self-aligned damascene-gate process.
Journal ArticleDOI
NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications
Weon Wi Jang,Jun-Bo Yoon,Min-Sang Kim,Ji-Myoung Lee,Sung-min Kim,Eun-Jung Yoon,Keun Hwi Cho,Sung-young Lee,In-Hyuk Choi,Dong-Won Kim,Donggun Park +10 more
TL;DR: In this paper, two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical top-down complementary metaloxide-semiconductor (CMOS) fabrication technology were successfully fabricated and electrically characterized.
Journal ArticleDOI
A novel multibridge-channel MOSFET (MBCFET): fabrication technologies and characteristics
TL;DR: In this paper, a novel three-dimensional multibridge-channel metal-oxide-semiconductor field effect transistor (MBCFET) was successfully fabricated using a conventional complementary metaloxide semiconductor process.
Patent
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
TL;DR: In this paper, the authors describe a semiconductor device with a cell region and a peripheral circuit region, a gate electrode formed over the gate dielectric layer, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.
Proceedings ArticleDOI
80 nm 512M DRAM with enhanced data retention time using partially-insulated cell array transistor (PiCAT)
Kyoung Hwan Yeo,Chang Woo Oh,Sung-min Kim,Min-Sang Kim,Chang-Sub Lee,Sung-young Lee,Ming Li,Hye-Jin Cho,Eun-Jung Yoon,Sung Hwan Kim,Jeong-Dong Choe,Dong-Won Kim,Donggun Park,Kinam Kim +13 more
TL;DR: In this paper, an 80 nm 512M DDR DRAM with partially-insulated cell array transistor (PiCAT) was fabricated, where Si/SiGe epitaxial growth and selective SiGe etch process were used to form PiOX (Partially-Insulating OXide) under source and drain of the cell transistor.