F. Fuchs

Bio: F. Fuchs is an academic researcher. The author has contributed to research in topics: Photoluminescence. The author has an hindex of 1, co-authored 1 publications receiving 46 citations.

Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm

Abstract: Photoluminescence (PL) and photoconductivity (PC) studies of Hg1−xCdxTe (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at wavelengths from 26 to 6 μm and in the temperature range 18 K–200 K. The PL line full width at half maximum is about 6 meV (4kT) at 18 K and approaches its theoretical limit of 1.8kT at higher temperatures. Carrier recombination process is also investigated by time resolved studies of PL and PC at pulsed excitation. Radiative transitions are shown to be the dominating mechanism of carrier recombination at high excitation levels.

Infrared Photoluminescence in Narrow‐Gap Semiconductors

Abstract: On s'interesse particulierement a la photoluminescence infra-rouge dans des composes II-VI a bande interdite etroite, et plus specialement au Hg 1-x Cd x Te. On etudie egalement la luminescence dans les sels de plomb et a l'influence du dopage, de l'alliage et de la perfection structurale

Exciton recombination in Te‐rich ZnSexTe1−x epilayers

Abstract: ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0

Molecular beam epitaxy growth and characterization of CdxHg1−xTe (0.4<x<1) based quantum wells

Abstract: CdxHg1−xTe epilayers and CdxHg1−xTe/CdyHg1−yTe quantum well heterostructures have been grown by molecular beam epitaxy. The various parameters of the growth technique have been carefully optimized: control of the thickness by the observation of the oscillations of the reflection‐high‐energy electron diffraction, the alloy composition by measuring the Cd sticking coefficient in our growth procedure, and the quality of the interfaces by performing transmission electron microscopy. The photoluminescence spectra at 5 K of thick CdxHg1−xTe epilayers are dominated by bound exciton recombination below the fundamental band gap Eg. By contrast, the main emission in the quantum wells photoluminescence spectra is due to an intrinsic recombination of the confined carriers in their respective ground state. The influence of CdxHg1−xTe well thickness and the CdyHg1−yTe barrier composition of this quantum well transition energy are presented.

Carrier localization in low-bandgap Hg1-xCdxTe crystals, studied by photoluminescence

Abstract: The authors report on Fourier transform photoluminescence studies, carried out on bulk Hg1-xCdxTe. Using a double-modulation technique, luminescence in the 10 mu m range has been measured. The dependence of the luminescence spectra on temperature and excitation density has been studied. A single line with a FWHM of 130 cm-1 is observed, which exhibits an anomalous increase of the intensity with rising temperature. In addition, a change of the lineshape and a large blue shift of the spectra of 6kB (0.52 meV K-1) occurs. These observations are explained on the basis of alloy disorder. Assuming exponential band tails and considering the effect of carrier localization on the minority carrier lifetime, the experimental results are consistently explained.