F. Hernandez-Gil†

Bio: F. Hernandez-Gil† is an academic researcher from Bell Labs. The author has contributed to research in topics: Power dividers and directional couplers & Optical switch. The author has an hindex of 2, co-authored 2 publications receiving 126 citations.

GaInAs/GaInAsP multiple-quantum-well integrated heterodyne receiver

Abstract: We describe the fabrication and performance of the first integrated heterodyne receiver capable of actual heterodyne data reception. Integrating a continuously tunable 1.5 μm MQW-DBR laser with a single-mode directional coupler/switch and zero-bias MQW waveguide photodetectors, we have achieved error-free reception of FSK-modulated pseudorandom digital code at 105 Mbit/s.

Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch

Abstract: We report the successful monolithic integration of a GaInasp/lnP single-mode ΔK directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser. We obtain several mW of output power through the switch, with ˜10dB crosstalk either from the internal laser source or with external light injected through the parallel input port.

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Abstract: A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system, and the performance achieved by experimental devices is discussed. The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure organometallic chemical vapor deposition (OMCVD), which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FETs to form monolithic receivers and with waveguides for on-chip optical signal processing is also included. >

Semiconductor photonic integrated circuits

Abstract: Semiconductor photonic integrated circuits (PICs) refer to that subset of optoelectronic integrated circuits (OEICs) which focus primarily on the monolithic integration of optically interconnected guided-wave optoelectronic devices. The principal motivation for PIC research is the expected cost reduction and packaging robustness associated with replacing individually aligned, single-mode optical connections between discrete optoelectronic devices with lithographically produced integrated waveguides. This field has recently seen significant advances resulting from improved III-V epitaxial crystal growth and related processing techniques. A discussion is presented of the design and fabrication issues, illustrated by a number of recently demonstrated InP-based PICs. >

Semiconductor lasers for coherent optical fiber communications

Abstract: The current status of semiconductor lasers used in coherent optical fiber communications is reviewed for nonexperts in the field. The issues of spectral purity, tuning, modulation, and advanced fabrication methods for photonic integration are discussed, with examples drawn from current experimental devices. >

Silicon photonic integration in telecommunications

Abstract: Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

High Performance InP-Based Photonic ICs—A Tutorial

Abstract: The performance of relatively complex photonic integrated circuits (PICs) is now reaching such high levels that the long sought goal of realizing low-cost, -size, -weight, and -power chips to replace hybrid solutions seems to have been achieved for some applications. This tutorial traces some of the evolution of this technology that has led to an array of high-functionality InP-based PICs useful in optical sensing and communication applications. Examples of recent high-performance PICs that have arisen out of these developments are presented. Fundamental to much of this work was the development of integration strategies to compatibly combine a variety of components in a relatively simple fabrication process. For the UCSB work, this was initially based upon the creation of a single-chip widely tunable semiconductor laser that required the integration of gain, reflector, phase-tuning and absorber sections. As it provided most of the elements needed for many more complex PICs, their creation followed somewhat naturally by adding more of these same elements outside of the laser cavity using the same processing steps. Of course, additional elements were needed for some of the PICs to be discussed, but in most cases, these have been added without adding significant processing complexity. Generally, the integration philosophy has been to avoid patterned epitaxial growths, to use post-growth processing, such as quantum-well intermixing to provide multiple bandgaps, rather than multiple epitaxial regrowths, and to focus on processes that could be performed with vendor growth and implant facilities so that only basic clean room processing facilities are required.