This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

The exact density functional for the ground-state energy is strictly self-interaction-free (i.e., orbitals demonstrably do not self-interact), but many approximations to it, including the local-spin-density (LSD) approximation for exchange and correlation, are not. We present two related methods for the self-interaction correction (SIC) of any density functional for the energy; correction of the self-consistent one-electron potenial follows naturally from the variational principle. Both methods are sanctioned by the Hohenberg-Kohn theorem. Although the first method introduces an orbital-dependent single-particle potential, the second involves a local potential as in the Kohn-Sham scheme. We apply the first method to LSD and show that it properly conserves the number content of the exchange-correlation hole, while substantially improving the description of its shape. We apply this method to a number of physical problems, where the uncorrected LSD approach produces systematic errors. We find systematic improvements, qualitative as well as quantitative, from this simple correction. Benefits of SIC in atomic calculations include (i) improved values for the total energy and for the separate exchange and correlation pieces of it, (ii) accurate binding energies of negative ions, which are wrongly unstable in LSD, (iii) more accurate electron densities, (iv) orbital eigenvalues that closely approximate physical removal energies, including relaxation, and (v) correct longrange behavior of the potential and density. It appears that SIC can also remedy the LSD underestimate of the band gaps in insulators (as shown by numerical calculations for the rare-gas solids and CuCl), and the LSD overestimate of the cohesive energies of transition metals. The LSD spin splitting in atomic Ni and $s\ensuremath{-}d$ interconfigurational energies of transition elements are almost unchanged by SIC. We also discuss the admissibility of fractional occupation numbers, and present a parametrization of the electron-gas correlation energy at any density, based on the recent results of Ceperley and Alder.

Self-interaction correction to density-functional approximations for many-electron systems

The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Diamond-like carbon (DLC) is a metastable form of amorphous carbon with significant sp3 bonding. DLC is a semiconductor with a high mechanical hardness, chemical inertness, and optical transparency. This review will describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of DLCs. The films have widespread applications as protective coatings in areas, such as magnetic storage disks, optical windows and micro-electromechanical devices (MEMs).

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Diamond-like amorphous carbon

The bonding of Si atoms at the SiO2/Si interface is determined via high-resolution core level spectroscopy with synchrotron radiation. For oxides grown in pure O2, the SiO2/Si interface is found to contain Si atoms in intermediate oxidation states with a density of 1.5 ± 0.5 × 1015 cm−2. From the density and distribution of intermediate oxidation states, models of the interface structure are obtained. The interface is not abrupt, as evidenced by the non-ideal distribution of intermediate oxidation states and their high density (about 2 monolayers of Si). The finite width of the interface is explained by the bond density mismatch between SiO2 and Si. Annealing in H2 is found to influence the electrical parameters by removing the Pb centers that pin the Fermi level. The distribution of intermediate oxidation states is not affected.

Microscopic structure of the SiO 2 /Si interface

Quantum photoyield and secondary-electron distributions are presented for an unreconstructed diamond (111) surface (type-$\mathrm{II}b$, gem-quality blue-white semiconductor). This chemically inert surface exhibits a negative electron affinity, resulting in a stable quantum yield that increases linearly from photothreshold (5.5 eV) to \ensuremath{\sim}20% at 9 eV, with a very large yield of \ensuremath{\sim}40%-70% for $13\ensuremath{\lesssim}h\ensuremath{\nu}\ensuremath{\lesssim}35$ eV. For all photon energies, secondary-electron energy distributions show a dominant \ensuremath{\sim}0.5-eV-wide emission peak at the conduction-band minimum (${\ensuremath{\Delta}}_{1}^{min}=5.50\ifmmode\pm\else\textpm\fi{}0.05$ eV above the valence-band maximum ${{\ensuremath{\Gamma}}_{25}}^{\ensuremath{'}}$). In contrast with recent self-consistent calculations [J. Ihm, S. G. Louie, and M. L. Cohen, Phys. Rev. B 17, 769 (1978)] no occupied intrinsic surface states with ionization energies in the fundamental gap (the Fermi level was 1 eV above ${{\ensuremath{\Gamma}}_{25}}^{\ensuremath{'}}$) were observed. Likewise, the measured photothreshold (${E}_{\mathrm{vac}}\ensuremath{-}{{\ensuremath{\Gamma}}_{25}}^{\ensuremath{'}}$) is significantly smaller than calculated (7.0\ifmmode\pm\else\textpm\fi{}0.7 eV).

Quantum photoyield of diamond(111)—A stable negative-affinity emitter

High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2‐Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3+:Si2+:Si1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 A width).

Probing the transition layer at the SiO2‐Si interface using core level photoemission

Microscopic structure of the SiO2/Si interface.

The IBM/TENN/TULANE/LLNL/LBL Beamline 8.0 at the advanced light source combining a 5.0 cm, 89 period undulator with a high‐throughput, high‐resolution spherical grating monochromator, provides a powerful excitation source over a spectral range of 70–1200 eV for surface physics and material science research. The beamline progress and the first experimental results obtained with a fluorescence end station on graphite and titanium oxides are presented here. The dispersive features in K emission spectra of graphite excited near threshold, and found a clear relationship between them and graphite band structure are observed. The monochromator is operated at a resolving power of roughly 2000, while the spectrometer has a resolving power of 400 for these fluorescence experiments.

F. J. Himpsel

Papers

Microscopic structure of the SiO 2 /Si interface

Quantum photoyield of diamond(111)—A stable negative-affinity emitter

Probing the transition layer at the SiO2‐Si interface using core level photoemission

Microscopic structure of the SiO2/Si interface.

First experimental results from IBM/TENN/TULANE/LLNL/LBL undulator beamline at the advanced light source