F
Fabrizio Roccaforte
Researcher at STMicroelectronics
Publications - 373
Citations - 7470
Fabrizio Roccaforte is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Schottky diode & Schottky barrier. The author has an hindex of 43, co-authored 346 publications receiving 6050 citations. Previous affiliations of Fabrizio Roccaforte include University of Göttingen & National Research Council.
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Journal ArticleDOI
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Raffaella Lo Nigro,Filippo Giannazzo,Ferdinando Iucolano,Mario Saggio +6 more
TL;DR: In this article, the authors review some emerging trends in the processing of wide band gap (WBG) semiconductor devices (e.g., diodes, MOSFETs, HEMTs, etc.).
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Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
TL;DR: In this paper, the electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC) was reported, and the Tung's model was used to determine the Richardson's constant A**.
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Ohmic contacts to Gallium Nitride materials
TL;DR: In this article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented, discussing the role of single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN.
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Barrier inhomogeneity and electrical properties of Pt∕GaN Schottky contacts
TL;DR: In this paper, the temperature dependence of the electrical properties of Pt∕GaN Schottky barrier has been studied in terms of the existing models on inhomogeneous barriers and correlated to the nanoscale electrical characterization of the barrier.
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Review of technology for normally-off HEMTs with p-GaN gate
TL;DR: In this paper, the most relevant technological issues for normally-off HEMTs with a p-GaN gate are discussed, including the operation principle and the impact of the heterostructure parameters.