Fanghao Ye

Bio: Fanghao Ye is an academic researcher from University of Hong Kong. The author has contributed to research in topics: Perovskite (structure). The author has an hindex of 1, co-authored 1 publications receiving 2 citations.

Recent Progress in Halide Perovskite Radiation Detectors for Gamma-Ray Spectroscopy

Abstract: Detecting hard X-rays and γ-rays with high energy resolution is critical for medical and industrial applications, high-energy fundamental physics, and homeland security. Two types of radiation detectors, indirect-conversion (scintillators) and direct-conversion (solid-state) detectors, are the most widely used technologies. Semiconductor-based detectors that can directly convert γ-rays into an electrical signal and operate at room temperature are especially important as portable and cost-efficient detectors with high sensitivity and energy resolution. Recently, lead halide perovskites have attracted enormous interest for γ-ray detection, and significant progress has been made toward practical detectors using perovskites as active materials. In this Review, we start with the fundamentals of γ-ray detection and review the recent developments in halide perovskite γ-ray detectors. The key factors affecting the detector performance are summarized. We also give an outlook on the field, with emphasis on the challenges to be overcome.

Perspective on Metal Halides with Self‐Trapped Exciton toward White Light‐Emitting Diodes

Abstract: Metal halides with self‐trapped exciton (STE‐MHs) featuring broadband emission have manifested great potential in white light‐emitting diodes (WLEDs) with encouraging progress proceeding at an exhilarating pace. In this Perspective article, the focus is on the key issues and challenges of STE‐MH as the single‐layered emitter in WLEDs after providing a brief introduction for STE and its working mechanism of the relevant white‐light emission. Possible approaches and future research directions for efficient STE‐MH‐based WLEDs are also put forward, aiming at promoting their application in the next‐generation high‐quality solid‐state lighting sources.

Impacts of the Lattice Strain on Perovskite Light‐Emitting Diodes

Abstract: The development of perovskite light-emitting diodes (PeLEDs) with both high efficiency and excellent stability remains challenging. Herein, a strong correlation between the lattice strain in perovskite films and the stability of resulting PeLEDs is revealed. Based on high-efficiency PeLEDs, the device lifetime is optimized by rationally tailoring the lattice strain in perovskite films. A PeLED with a high peak external quantum efficiency of 18.2% and a long lifetime of 151 h (T70, under a current density of 20 mA cm−2) is realized with a minimized lattice strain in the perovskite film. In addition, an increase in the lattice strain is found during the long-time device stability test, indicating that the degradation of the local perovskite lattice structure could be one of the degradation mechanisms for long-term stable PeLEDs.