F
Farhad Moghadam
Researcher at Applied Materials
Publications - 53
Citations - 3349
Farhad Moghadam is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Dielectric. The author has an hindex of 23, co-authored 53 publications receiving 3349 citations. Previous affiliations of Farhad Moghadam include Demos.
Papers
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Patent
Plasma processes for depositing low dielectric constant films
David Cheung,Wai-Fan Yau,Robert P. Mandal,Shin-Puu Jeng,Kuo-Wei Liu,Yung-Cheng Lu,Michael Barnes,Ralf B. Willecke,Farhad Moghadam,Tetsuya Ishikawa,Tze Wing Poon +10 more
TL;DR: In this article, a method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level is presented.
Patent
Integrated low k dielectrics and etch stops
Claes H. Bjorkman,Yu Melissa Min,Hongquing Shan,David Cheung,Wai-Fan Yau,Kuo-Wei Liu,Nasreen Gazala Chopra,Gerald Zheyao Yin,Farhad Moghadam,Judy H. Huang,Dennis J. Yost,Betty Tang,Yunsang Kim +12 more
TL;DR: In this paper, a method of depositing and etching dielectric layers has been proposed for the formation of horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide.
Patent
Symmetric tunable inductively coupled HDP-CVD reactor
Fred C. Redeker,Farhad Moghadam,Hiroji Hanawa,Tetsuya Ishikawa,Dan Maydan,Shijian Li,Brian Lue,Robert Cupertino Steger,Manus Wong,Yaxin Wong,Ashok Sinha +10 more
TL;DR: In this paper, an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having aspect ratios higher than 1.2:1.
Patent
Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
Farhad Moghadam,David Cheung,Ellie Yieh,Li-Qun Xia,Wai-Fan Yau,Chi-I Lang,Shin-Puu Jeng,Frederic Gaillard,Shankar Venkataraman,Srinivas D. Nemani +9 more
TL;DR: In this article, a method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C.
Patent
Sequential gas flow oxide deposition technique
TL;DR: In this paper, a method of depositing a silica glass insulating film over a substrate is described, which involves exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon containing reactant are adsorbed onto the substrate, and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.