Soft lithography is an alternative to silicon-based micromachining that uses replica molding of nontraditional elastomeric materials to fabricate stamps and microfluidic channels. We describe here an extension to the soft lithography paradigm, multilayer soft lithography, with which devices consisting of multiple layers may be fabricated from soft materials. We used this technique to build active microfluidic systems containing on-off valves, switching valves, and pumps entirely out of elastomer. The softness of these materials allows the device areas to be reduced by more than two orders of magnitude compared with silicon-based devices. The other advantages of soft lithography, such as rapid prototyping, ease of fabrication, and biocompatibility, are retained.

http://science.sciencemag.org/content/sci/288/5463/113.full.pdf

Monolithic microfabricated valves and pumps by multilayer soft lithography

High-density microfluidic chips contain plumbing networks with thousands of micromechanical valves and hundreds of individually addressable chambers. These fluidic devices are analogous to electronic integrated circuits fabricated using large scale integration (LSI). A component of these networks is the fluidic multiplexor, which is a combinatorial array of binary valve patterns that exponentially increases the processing power of a network by allowing complex fluid manipulations with a minimal number of inputs. These integrated microfluidic networks can be used to construct a variety of highly complex microfluidic devices, for example the microfluidic analog of a comparator array, and a microfluidic memory storage device resembling electronic random access memories.

https://science.sciencemag.org/content/sci/298/5593/580.full.pdf

Microfluidic large scale integration

This paper presents a review of silicon micromachined accelerometers and gyroscopes. Following a brief introduction to their operating principles and specifications, various device structures, fabrication, technologies, device designs, packaging, and interface electronics issues, along with the present status in the commercialization of micromachined inertial sensors, are discussed. Inertial sensors have seen a steady improvement in their performance, and today, microaccelerometers can resolve accelerations in the micro-g range, while the performance of gyroscopes has improved by a factor of 10/spl times/ every two years during the past eight years. This impressive drive to higher performance, lower cost, greater functionality, higher levels of integration, and higher volume will continue as new fabrication, circuit, and packaging techniques are developed to meet the ever increasing demand for inertial sensors.

/pdf/micromachined-inertial-sensors-esf6197vdc.pdf

Micromachined inertial sensors

Part I: Background and Fundamentals Introduction, Mohamed Gad-el-Hak, University of Notre Dame Scaling of Micromechanical Devices, William Trimmer, Standard MEMS, Inc., and Robert H. Stroud, Aerospace Corporation Mechanical Properties of MEMS Materials, William N. Sharpe, Jr., Johns Hopkins University Flow Physics, Mohamed Gad-el-Hak, University of Notre Dame Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains, Robert M. Kirby and George Em Karniadakis, Brown University, and Oleg Mikulchenko and Kartikeya Mayaram, Oregon State University Liquid Flows in Microchannels, Kendra V. Sharp and Ronald J. Adrian, University of Illinois at Urbana-Champaign, Juan G. Santiago and Joshua I. Molho, Stanford University Burnett Simulations of Flows in Microdevices, Ramesh K. Agarwal and Keon-Young Yun, Wichita State University Molecular-Based Microfluidic Simulation Models, Ali Beskok, Texas A&M University Lubrication in MEMS, Kenneth S. Breuer, Brown University Physics of Thin Liquid Films, Alexander Oron, Technion, Israel Bubble/Drop Transport in Microchannels, Hsueh-Chia Chang, University of Notre Dame Fundamentals of Control Theory, Bill Goodwine, University of Notre Dame Model-Based Flow Control for Distributed Architectures, Thomas R. Bewley, University of California, San Diego Soft Computing in Control, Mihir Sen and Bill Goodwine, University of Notre Dame Part II: Design and Fabrication Materials for Microelectromechanical Systems Christian A. Zorman and Mehran Mehregany, Case Western Reserve University MEMS Fabrication, Marc J. Madou, Nanogen, Inc. LIGA and Other Replication Techniques, Marc J. Madou, Nanogen, Inc. X-Ray-Based Fabrication, Todd Christenson, Sandia National Laboratories Electrochemical Fabrication (EFAB), Adam L. Cohen, MEMGen Corporation Fabrication and Characterization of Single-Crystal Silicon Carbide MEMS, Robert S. Okojie, NASA Glenn Research Center Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide, Glenn M. Beheim, NASA Glenn Research Center Microfabricated Chemical Sensors for Aerospace Applications, Gary W. Hunter, NASA Glenn Research Center, Chung-Chiun Liu, Case Western Reserve University, and Darby B. Makel, Makel Engineering, Inc. Packaging of Harsh-Environment MEMS Devices, Liang-Yu Chen and Jih-Fen Lei, NASA Glenn Research Center Part III: Applications of MEMS Inertial Sensors, Paul L. Bergstrom, Michigan Technological University, and Gary G. Li, OMM, Inc. Micromachined Pressure Sensors, Jae-Sung Park, Chester Wilson, and Yogesh B. Gianchandani, University of Wisconsin-Madison Sensors and Actuators for Turbulent Flows. Lennart Loefdahl, Chalmers University of Technology, and Mohamed Gad-el-Hak, University of Notre Dame Surface-Micromachined Mechanisms, Andrew D. Oliver and David W. Plummer, Sandia National Laboratories Microrobotics Thorbjoern Ebefors and Goeran Stemme, Royal Institute of Technology, Sweden Microscale Vacuum Pumps, E. Phillip Muntz, University of Southern California, and Stephen E. Vargo, SiWave, Inc. Microdroplet Generators. Fan-Gang Tseng, National Tsing Hua University, Taiwan Micro Heat Pipes and Micro Heat Spreaders, G. P. "Bud" Peterson, Rensselaer Polytechnic Institute Microchannel Heat Sinks, Yitshak Zohar, Hong Kong University of Science and Technology Flow Control, Mohamed Gad-el-Hak, University of Notre Dame) Part IV: The Future Reactive Control for Skin-Friction Reduction, Haecheon Choi, Seoul National University Towards MEMS Autonomous Control of Free-Shear Flows, Ahmed Naguib, Michigan State University Fabrication Technologies for Nanoelectromechanical Systems, Gary H. Bernstein, Holly V. Goodson, and Gregory L. Snider, University of Notre Dame Index

The MEMS Handbook

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Design Of Analog Cmos Integrated Circuits

This paper presents the design, fabrication, and testing of an 80-/spl mu/m-thick, 1.1 mm in diameter high aspect-ratio (20:1) polysilicon ring gyroscope (PRG). The vibrating ring gyroscope was fabricated through the high aspect-ratio combined poly and single-crystal silicon MEMS technology (HARPSS). This all-silicon single-wafer technology is capable of producing electrically isolated vertical electrodes as tall as the main body structure (50 to 100's (/spl mu/m tall)) with various size air-gaps ranging from submicron to tens of microns. A detailed analysis has been performed to determine the overall sensitivity of the vibrating ring gyroscope and identify its scaling limits. An open-loop sensitivity of 200 /spl mu/V/deg/s in a dynamic range of /spl plusmn/250 deg/s was measured under low vacuum level for a prototype device tested in hybrid format. The resolution for a PRG with a quality factor (Q) of 1200, drive amplitude of 0.15 /spl mu/m, and sense node parasitic capacitances of 2 pF was measured to be less than 1 deg/s in 1 Hz bandwidth, limited by the noise from the circuitry. Elimination of the parasitic capacitances and improvement in the quality factor of the ring structure are expected to reduce the resolution to 0.01 deg/s/(Hz)/sup 0.5/.

/pdf/a-harpss-polysilicon-vibrating-ring-gyroscope-4vpv6wt4hr.pdf

A HARPSS polysilicon vibrating ring gyroscope

This paper presents an analytical model for support loss in clamped–free (C–F) and clamped–clamped (C–C) micromachined beam resonators with in-plane flexural vibrations. In this model, the flexural vibration of a beam resonator is described using the beam theory. An elastic wave excited by the shear stress of the beam resonator and propagating in the support structure is described through the 2D elastic wave theory, with the assumption that the beam thickness (h) is much smaller than the transverse elastic wavelength (λT). Through the combination of these two theories and the Fourier transform, closed-form expressions for support loss in C–F and C–C beam resonators are obtained. Specifically, closed-form expression for the support loss in a C–C beam resonator is derived for the first time. The model suggests lower support quality factor (Qsupport) for higher order resonant modes compared to the fundamental mode of a beam resonator. Through comparison with experimental data, the validity of the presented analytical model is demonstrated. © 2003 Elsevier B.V. All rights reserved.

An analytical model for support loss in micromachined beam resonators with in-plane flexural vibrations

This paper reports on the design and characterization of a process, temperature and supply compensation technique for a 7-MHz clock oscillator in a 0.25-/spl mu/m, two-poly five-metal (2P5M) CMOS process. Measurements made across a temperature range of -40/spl deg/C to 125/spl deg/C and 94 samples collected over four fabrication runs indicate a worst case combined variation of /spl plusmn/2.6% (with process, temperature and supply). No trimming was performed on any of these samples. The oscillation frequencies of 95% of the samples were found to fall within /spl plusmn/0.5% of the mean frequency and the standard deviation was 9.3 kHz. The variation of frequency with power supply was /spl plusmn/0.31% for a supply voltage range of 2.4-2.75 V. The clock generator is based on a three-stage differential ring oscillator. The variation of the frequency of the oscillator with temperature and process has been discussed and an adaptive biasing scheme incorporating a unique combination of a process corner sensing scheme and a temperature compensating network is developed. The biasing circuit changes the control voltage of the differential ring oscillator to maintain a constant frequency. A comparator included at the output stage ensures rail-to-rail swing. The oscillator is intended to serve as a start-up clock for micro-controller applications.

Process and temperature compensation in a 7-MHz CMOS clock oscillator

This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators Low-motional impedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz A passive temperature compensation method is also utilized bThis paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators Low-motionalimpedance TPoS resonators are designed and fabricated in 2 classes--high-order and coupled-array Devices of each class are used to assemble reference oscillators and the performance characteristics of the oscillators are measured and discussed Since the motional impedance of these devices is small, the transimpedance amplifier (TIA) in the oscillator loop can be reduced to a single transistor and 3 resistors, a format that is very power-efficient The lowest reported power consumption is ~350 muW for an oscillator operating at ~106 MHz A passive temperature compensation method is also utilized by including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-24 ppm/degC) temperature coefficient of frequency is obtained for an 82-MHz oscillatory including the buried oxide layer of the silicon-on-insulator (SOI) substrate in the structural resonant body of the device, and a very small (-24 ppm/degC) temperature coefficient of frequency is obtained for an 82-MHz oscillator

Farrokh Ayazi

Papers

Micromachined inertial sensors

A HARPSS polysilicon vibrating ring gyroscope

An analytical model for support loss in micromachined beam resonators with in-plane flexural vibrations

Process and temperature compensation in a 7-MHz CMOS clock oscillator

Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications