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Fei Fred Wang

Bio: Fei Fred Wang is an academic researcher from University of Tennessee. The author has contributed to research in topics: Voltage & Power electronics. The author has an hindex of 12, co-authored 20 publications receiving 1105 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Abstract: Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic $R_{\mathrm {{ds}},\mathrm {{on}}}$ , breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

769 citations

Journal ArticleDOI
TL;DR: Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V–I timing misalignment errors.
Abstract: The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method is proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.

189 citations

Journal ArticleDOI
TL;DR: This paper presents a comprehensive virtual generator control method for the full converter wind turbine, with a minute-level energy storage in the dc link as the energy buffer, which allows it to work under both grid-connected and stand-alone condition.
Abstract: One way to incorporate the increasing amount of wind penetration is to control wind turbines to emulate the behavior of conventional synchronous generators. However, the energy balance is the main issue for the wind turbines to be truly dispatchable by the power system operator such as the generators. This paper presents a comprehensive virtual generator control method for the full converter wind turbine, with a minute-level energy storage in the dc link as the energy buffer. The voltage closed-loop virtual synchronous generator control of the wind turbine allows it to work under both grid-connected and stand-alone condition. Power balance of the wind turbine system is achieved by controlling the rotor speed of the turbine according to the loading condition. With the proposed control, the wind turbine system can enhance the dynamic response, and can be dispatched and regulated by the system operator. The sizing design of the short term energy storage is also discussed in this paper. Experimental results are presented to demonstrate the feasibility and effectiveness of the proposed control method.

164 citations

Journal ArticleDOI
TL;DR: The influence of cryogenic temperature on power semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection and dielectric materials, and some typical cryogenic converter systems are reviewed.
Abstract: In order to apply power electronics systems to applications such as superconducting systems under cryogenic temperatures, it is necessary to investigate the characteristics of different parts in the power electronics system. This article reviews the influence of cryogenic temperature on power semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection and dielectric materials, and some typical cryogenic converter systems. Also, the basic theories and principles are given to explain the trends for different aspects of cryogenically cooled converters. Based on the review, Si active power devices, bulk Complementary metal-oxide-semiconductor (CMOS) based integrated circuits, nanocrystalline and amorphous magnetic cores, NP0 ceramic and film capacitors, thin/metal film and wirewound resistors are the components suitable for cryogenic operation. Pb-rich PbSn solder or In solder, classic printed circuit boards material, most insulation papers and epoxy encapsulant are good interconnection and dielectric parts for cryogenic temperatures.

94 citations

Journal ArticleDOI
TL;DR: The proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.
Abstract: This paper presents an intelligent gate drive for silicon carbide (SiC) devices to fully utilize their potential of high switching-speed capability in a phase-leg configuration. Based on the SiC device's intrinsic properties, a gate assist circuit consisting of two auxiliary transistors with two diodes is introduced to actively control gate voltages and gate loop impedances of both devices in a phase-leg configuration during different switching transients. Compared to conventional gate drives, the proposed circuit has the capability of accelerating the switching speed of the phase-leg power devices and suppressing the crosstalk to below device limits. Based on Wolfspeed 1200-V SiC MOSFETs, the test results demonstrate the effectiveness of this intelligent gate drive under varying operating conditions. More importantly, the proposed intelligent gate assist circuitry is embedded into a gate drive integrated circuit, offering a simple, compact, and reliable solution for end-users to maximize benefits of SiC devices in actual power electronics applications.

83 citations


Cited by
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01 Jan 2016
TL;DR: This power electronics converters applications and design helps people to enjoy a good book with a cup of tea in the afternoon, instead they cope with some malicious virus inside their desktop computer.
Abstract: Thank you for downloading power electronics converters applications and design. Maybe you have knowledge that, people have look numerous times for their favorite readings like this power electronics converters applications and design, but end up in harmful downloads. Rather than enjoying a good book with a cup of tea in the afternoon, instead they cope with some malicious virus inside their desktop computer.

754 citations

Journal ArticleDOI
10 Dec 2019
TL;DR: The benefits of using the solid-state transformers in the XFC stations to replace the conventional line-frequency transformers and a comprehensive review of the medium-voltage SST designs for the X FC application are considered.
Abstract: With the number of electric vehicles (EVs) on the rise, there is a need for an adequate charging infrastructure to serve these vehicles. The emerging extreme fast-charging (XFC) technology has the potential to provide a refueling experience similar to that of gasoline vehicles. In this article, we review the state-of-the-art EV charging infrastructure and focus on the XFC technology, which will be necessary to support the current and future EV refueling needs. We present the design considerations of the XFC stations and review the typical power electronics converter topologies suitable to deliver XFC. We consider the benefits of using the solid-state transformers (SSTs) in the XFC stations to replace the conventional line-frequency transformers and further provide a comprehensive review of the medium-voltage SST designs for the XFC application.

382 citations

Journal ArticleDOI
14 Jan 2019
TL;DR: The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt, and the reliability of WBG devices are discussed.
Abstract: Wide bandgap (WBG) device-based power electronics converters are more efficient and lightweight than silicon-based converters. WBG devices are an enabling technology for many motor drive applications and new classes of compact and efficient motors. This paper reviews the potential applications and advances enabled by WBG devices in ac motor drives. Industrial motor drive products using WBG devices are reviewed, and the benefits are highlighted. This paper also discusses the technical challenges, converter design considerations, and design tradeoffs in realizing the full potential of WBG devices in motor drives. There is a tradeoff between high switching frequency and other issues such as high dv/dt and electromagnetic interference. The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt , and the reliability of WBG devices are discussed.

207 citations

Journal ArticleDOI
TL;DR: The challenges of DC microgrid protection are investigated from various aspects including, dc fault current characteristics, ground systems, fault detection methods, protective devices, and fault location methods.
Abstract: DC microgrids have attracted significant attention over the last decade in both academia and industry. DC microgrids have demonstrated superiority over AC microgrids with respect to reliability, efficiency, control simplicity, integration of renewable energy sources, and connection of dc loads. Despite these numerous advantages, designing and implementing an appropriate protection system for dc microgrids remains a significant challenge. The challenge stems from the rapid rise of dc fault current which must be extinguished in the absence of naturally occurring zero crossings, potentially leading to sustained arcs. In this paper, the challenges of DC microgrid protection are investigated from various aspects including, dc fault current characteristics, ground systems, fault detection methods, protective devices, and fault location methods. In each part, a comprehensive review has been carried out. Finally, future trends in the protection of DC microgrids are briefly discussed.

188 citations

Journal ArticleDOI
TL;DR: This paper investigates and quantifies the increase in the conductedCM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted and reveals that the influence of dv/dt on the conducted CM emission is generally limited.
Abstract: Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant conducted common-mode (CM) electromagnetic interference (EMI) emission of motor drives will be further exacerbated by the high-speed switching operation of these new devices. Hence, this paper investigates and quantifies the increase in the conducted CM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted. Through an analytical approach, the results reveal that the influence of dv/dt on the conducted CM emission is generally limited. On the other hand, the influence of switching frequency is more significant. Lab tests are also conducted to verify the analysis.

188 citations