Feng Pan

TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.

TL;DR: The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable memory element for developing next generation nonvolatile memories and a model concerning redox reaction mediated formation and rupture of Ag bridges is suggested to explain the memory effect.

TL;DR: In this paper, the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics, are discussed.

TL;DR: In this paper, the authors provide a comprehensive review of recent progress in voltage control of magnetism in different thin films and discuss the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.

TL;DR: In this paper, the authors provide a comprehensive review of recent progress in voltage control of magnetism in different thin films and discuss the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field.