This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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The electronic properties of graphene

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Single-layer MoS2 transistors

This paper reviews recent experimental and theoretical progress concerning many-body phenomena in dilute, ultracold gases. It focuses on effects beyond standard weak-coupling descriptions, such as the Mott-Hubbard transition in optical lattices, strongly interacting gases in one and two dimensions, or lowest-Landau-level physics in quasi-two-dimensional gases in fast rotation. Strong correlations in fermionic gases are discussed in optical lattices or near-Feshbach resonances in the BCS-BEC crossover.

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Many-Body Physics with Ultracold Gases

The calculation of rate coefficients is a discipline of nonlinear science of importance to much of physics, chemistry, engineering, and biology. Fifty years after Kramers' seminal paper on thermally activated barrier crossing, the authors report, extend, and interpret much of our current understanding relating to theories of noise-activated escape, for which many of the notable contributions are originating from the communities both of physics and of physical chemistry. Theoretical as well as numerical approaches are discussed for single- and many-dimensional metastable systems (including fields) in gases and condensed phases. The role of many-dimensional transition-state theory is contrasted with Kramers' reaction-rate theory for moderate-to-strong friction; the authors emphasize the physical situation and the close connection between unimolecular rate theory and Kramers' work for weakly damped systems. The rate theory accounting for memory friction is presented, together with a unifying theoretical approach which covers the whole regime of weak-to-moderate-to-strong friction on the same basis (turnover theory). The peculiarities of noise-activated escape in a variety of physically different metastable potential configurations is elucidated in terms of the mean-first-passage-time technique. Moreover, the role and the complexity of escape in driven systems exhibiting possibly multiple, metastable stationary nonequilibrium states is identified. At lower temperatures, quantum tunneling effects start to dominate the rate mechanism. The early quantum approaches as well as the latest quantum versions of Kramers' theory are discussed, thereby providing a description of dissipative escape events at all temperatures. In addition, an attempt is made to discuss prominent experimental work as it relates to Kramers' reaction-rate theory and to indicate the most important areas for future research in theory and experiment.

Reaction-rate theory: fifty years after Kramers

The phenomenon of Bose-Einstein condensation of dilute gases in traps is reviewed from a theoretical perspective. Mean-field theory provides a framework to understand the main features of the condensation and the role of interactions between particles. Various properties of these systems are discussed, including the density profiles and the energy of the ground-state configurations, the collective oscillations and the dynamics of the expansion, the condensate fraction and the thermodynamic functions. The thermodynamic limit exhibits a scaling behavior in the relevant length and energy scales. Despite the dilute nature of the gases, interactions profoundly modify the static as well as the dynamic properties of the system; the predictions of mean-field theory are in excellent agreement with available experimental results. Effects of superfluidity including the existence of quantized vortices and the reduction of the moment of inertia are discussed, as well as the consequences of coherence such as the Josephson effect and interference phenomena. The review also assesses the accuracy and limitations of the mean-field approach.

https://arxiv.org/pdf/cond-mat/9806038.pdf

Theory of Bose-Einstein condensation in trapped gases

The polarization of graphene is calculated exactly within the random phase approximation for arbitrary frequency, wavevector and doping. At finite doping, the static susceptibility saturates to a constant value for low momenta. At q = 2kF it has a discontinuity only in the second derivative. In the presence of a charged impurity this results in Friedel oscillations which decay with the same power law as the Thomas–Fermi contribution, the latter being always dominant. The spin density oscillations in the presence of a magnetic impurity are also calculated. The dynamical polarization for low q and arbitrary ω is employed to calculate the dispersion relation and the decay rate of plasmons and acoustic phonons as a function of doping. The low screening of graphene, combined with the absence of a gap, leads to a significant stiffening of the longitudinal acoustic lattice vibrations.

https://iopscience.iop.org/article/10.1088/1367-2630/8/12/318/pdf

Dynamical polarization of graphene at finite doping

We present a theoretical study of semiconductor T‐structures which may exhibit transistor action based on quantum interference. The electron transmission through a semiconductor quantum wire can be controlled by an external gate voltage that modifies the penetration of the electron wavefunction in a lateral stub, affecting in this way its interference pattern. The structures are modeled as ideal two‐dimensional electron waveguides and a tight‐binding Green’s function technique is used to compute the electron transmission and reflection coefficients. The calculations show that relatively small changes in the stub length can induce strong variations in the electron transmission across the structure. Operation in the fundamental transverse mode appears to be important for applications. We also show that a bound state of purely geometrical origin nucleates at the intersection between waveguide and stub. The performance of the device can be improved by inserting additional stubs of slightly different lengths. ...

Theory for a quantum modulated transistor

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to the presence of necks arising from the roughness of the graphene edge. With the average transmission as the only fitting parameter, our theory shows good agreement with the experimental data.

Coulomb blockade in graphene nanoribbons.

A theoretical study of quantum interference phenomena in a T‐shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight‐binding Green function technique. As expected, the results resemble the well‐known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.

On the possibility of transistor action based on quantum interference phenomena

We study the Josephson effect between atomic Bose-Einstein condensates. By drawing on an electrostatic analogy, we derive a semiclassical functional expression for the three-dimensional Josephson coupling energy in terms of the condensate density. Estimates of the capacitive energy and of the Josephson plasma frequency are also given. The effect of dissipation due to the incoherent exchange of normal atoms is analyzed. We conclude that coherent Josephson dynamics may already be observable in current experimental systems.

https://arxiv.org/pdf/cond-mat/9707143.pdf

Fernando Sols

Papers

Dynamical polarization of graphene at finite doping

Theory for a quantum modulated transistor

Coulomb blockade in graphene nanoribbons.

On the possibility of transistor action based on quantum interference phenomena

Josephson effect between trapped Bose-Einstein condensates