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Author

Florian Böhm

Other affiliations: Humboldt State University
Bio: Florian Böhm is an academic researcher from Humboldt University of Berlin. The author has contributed to research in topics: Photon & Photonics. The author has an hindex of 5, co-authored 13 publications receiving 132 citations. Previous affiliations of Florian Böhm include Humboldt State University.

Papers
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Journal ArticleDOI
TL;DR: In this article, the authors report electrostatic control of a huge spectral shift for individually selected emitters in $h$-BN, based on applying an electric field via a conductive tip, which allows for a systematic analysis of crucial properties of individual solidstate emitters.
Abstract: Bright, solid-state single-photon emitters are essential for scalable quantum photonic technology. Room-temperature switching of such emitters into and out of resonance, which is key for quantum functionality, requires reversible and wide-range tuning, but such an emitter has remained elusive. The authors report electrostatic control of a huge spectral shift for individually selected emitters in $h$-BN. Their method, based on applying an electric field via a conductive tip, is simple, yet allows for a systematic analysis of crucial properties of individual solid-state emitters. This appears to be a large step forward in integrated quantum optics.

52 citations

Journal ArticleDOI
20 Aug 2019
TL;DR: In this paper, a metal hemisphere attached to the tip of an atomic force microscope is used to directly measure the lifetime variation of single-photon emitters as the tip approaches a hexagonal boron nitride (h-BN).
Abstract: Single-photon emitters (SPEs) in two-dimensional materials are promising candidates for the future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of SPEs in few-layer hexagonal boron nitride (h-BN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the h-BN. This technique enables nondestructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching (87±7)% at wavelengths of ≈580 nm, which is among the highest QEs recorded for a solid-state SPE.

49 citations

Journal ArticleDOI
TL;DR: In this article, the lifetime variation of single photon emitters in a few-layer hexagonal boron nitride (hBN) was measured using a metal hemisphere attached to the tip of an atomic force microscope.
Abstract: Single photon emitters in two-dimensional materials are promising candidates for future generation of quantum photonic technologies. In this work, we experimentally determine the quantum efficiency (QE) of single photon emitters (SPE) in few-layer hexagonal boron nitride (hBN). We employ a metal hemisphere that is attached to the tip of an atomic force microscope to directly measure the lifetime variation of the SPEs as the tip approaches the hBN. This technique enables non-destructive, yet direct and absolute measurement of the QE of SPEs. We find that the emitters exhibit very high QEs approaching $(87 \pm 7)\,\%$ at wavelengths of $\approx\,580\,\mathrm{nm}$, which is amongst the highest QEs recorded for a solid state single photon emitter.

26 citations

Journal ArticleDOI
TL;DR: In this article, the authors present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate.
Abstract: One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO$_2$ grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.

23 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate.
Abstract: One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.

22 citations


Cited by
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Journal Article
TL;DR: In this article, the authors demonstrate first room temperature and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride.
Abstract: We demonstrate first room temperature, and ultrabright single photon emission from a color center in two-dimensional multilayer hexagonal boron nitride. Density Functional Theory calculations indicate that vacancy-related centers are a likely source of the emission.

706 citations

Journal ArticleDOI
TL;DR: This Article exploits near-field microscopy to image propagating plasmons in high-quality graphene encapsulated between two films of hexagonal boron nitride (h-BN), and finds unprecedentedly low plasmon damping combined with strong field confinement and confirms the high uniformity of this plAsmonic medium.
Abstract: Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

679 citations

Journal ArticleDOI
TL;DR: Hexagonal boron nitride (hBN) is a natural hyperbolic material in the mid-IR range, in which photonic material options are sparse as discussed by the authors.
Abstract: For more than seven decades, hexagonal boron nitride (hBN) has been employed as an inert, thermally stable engineering ceramic; since 2010, it has also been used as the optimal substrate for graphene in nanoelectronic and optoelectronic devices. Recent research has revealed that hBN exhibits a unique combination of optical properties that enable novel (nano)photonic functionalities. Specifically, hBN is a natural hyperbolic material in the mid-IR range, in which photonic material options are sparse. Furthermore, hBN hosts defects that can be engineered to obtain room-temperature, single-photon emission; exhibits strong second-order nonlinearities with broad implications for practical devices; and is a wide-bandgap semiconductor well suited for deep UV emitters and detectors. Inspired by these promising attributes, research on the properties of hBN and the development of large-area bulk and thin-film growth techniques has dramatically expanded. This Review offers a snapshot of current research exploring the properties underlying the use of hBN for future photonics functionalities and potential applications, and covers some of the remaining obstacles. Hexagonal boron nitride (hBN) is highly sought after for mid-IR nanophotonics, nonlinear and quantum optics, and as an efficient UV emitter. This Review surveys its fundamental physical properties, applications and synthesis.

482 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that carbon-containing defects in hexagonal boron nitride (hBN) are carbon-related and that only carbon implantation creates single photon emitters in the visible spectral range.
Abstract: Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered increasing attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN via various bottom-up synthesis methods and directly through ion implantation, we provide direct evidence that the visible SPEs are carbon related. Room-temperature optically detected magnetic resonance is demonstrated on ensembles of these defects. We perform ion-implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of the simplest 12 carbon-containing defect species suggest the negatively charged $${\rm{V}}_{\rm{B}}{\rm{C}}_{\rm{N}}^ -$$ defect as a viable candidate and predict that out-of-plane deformations make the defect environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to the deterministic engineering of these defects for quantum photonic devices. Comparison of hexagonal boron nitride samples grown with different techniques and with varying carbon-doping content provides evidence that the defects emitting single photons in the visible range are carbon related.

188 citations