Fong Yin Lim

TL;DR: Fully CMOS compatible silicon-nanowire (SiNW) gate-all-around (GAA) n- and p-MOS transistors are fabricated with nanowire channel in different crystal orientations and characterized at various temperatures down to 5K as mentioned in this paper.

TL;DR: This paper presents two efficient and spectrally accurate numerical methods for computing the ground and first excited states in Bose-Einstein condensates (BECs) that are much more accurate and efficient than those existing numerical methods in the literature.

TL;DR: The key idea is to find a third projection or normalization condition based on the relation between the chemical potentials so that the three projection parameters used in the projection step of the normalized gradient flow are uniquely determined by this condition as well as the other two physical conditions given by the conservation of total mass and total magnetization.

TL;DR: This model can be used to further study how tumour cells move through the extracellular matrix during cancer metastasis and to model cell migration in confined environments and to investigate the effects of confinement on the cell migration speed.

TL;DR: This work proposes efficient and accurate numerical methods for computing the ground-state solution of spin-1 Bose-Einstein condensates subjected to a uniform magnetic field based on the normalized gradient flow with the introduction of a third normalization condition.