Francesco Borgatti

Bio: Francesco Borgatti is an academic researcher from AREA Science Park. The author has contributed to research in topics: Thin film & X-ray photoelectron spectroscopy. The author has an hindex of 27, co-authored 93 publications receiving 2581 citations. Previous affiliations of Francesco Borgatti include European Synchrotron Radiation Facility & National Research Council.

Room-temperature spintronic effects in Alq3-based hybrid devices

Abstract: We report on efficient spin polarized injection and transport in long (102 nm) channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel barrier placed between the “soft” organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50–100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100- and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq3-based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport.

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Abstract: Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long-range ferromagnetism at ambient temperature can be induced in Bi2–xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

The BEAR Beamline at Elettra

Abstract: The BEAR (Bending Magnet for Emission Absorption and Reflectivity) beamline is installed at the right exit of the 8.1 bending magnet at ELETTRA. The beamline — in operation since January 2003 — delivers linear and circularly polarized radiation in the 5 – 1600 eV energy range. The experimental station is composed of a UHV chamber for reflectivity, absorption, fluorescence and angle resolved photoemission measurements and a UHV chamber for in‐situ sample preparation.

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

Abstract: Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating condition. Here we demonstrate that the long range ferromagnetism at ambient temperature can be induced in Bi2-xMnxTe3 by the magnetic proximity effect through deposited Fe overlayer. This result opens a new path to interface-controlled ferromagnetism in TI-based spintronic devices.

Layered distribution of charge carriers in organic thin film transistors.

Abstract: Drain-source current in organic thin-film transistors has been monitored in situ and in real time during the deposition of pentacene. The current starts to flow when percolation of the first monolayer (ML) occurs and, depending on the deposition rate, saturates at a coverage in the range 2-7 MLs. The number of active layers contributing to the current and the spatial distribution of charge carriers are modulated by the growth mode. The thickness of the accumulation layer, represented by an effective Debye length, scales as the morphological correlation length. These results show that the effective Debye length is not just a material parameter, but depends on the multiscale morphology. Earlier controversial results can be unified within this framework.

A highly active and stable IrOx/SrIrO3 catalyst for the oxygen evolution reaction

Abstract: Oxygen electrochemistry plays a key role in renewable energy technologies such as fuel cells and electrolyzers, but the slow kinetics of the oxygen evolution reaction (OER) limit the performance and commercialization of such devices. Here we report an iridium oxide/strontium iridium oxide (IrOx/SrIrO3) catalyst formed during electrochemical testing by strontium leaching from surface layers of thin films of SrIrO3 This catalyst has demonstrated specific activity at 10 milliamps per square centimeter of oxide catalyst (OER current normalized to catalyst surface area), with only 270 to 290 millivolts of overpotential for 30 hours of continuous testing in acidic electrolyte. Density functional theory calculations suggest the formation of highly active surface layers during strontium leaching with IrO3 or anatase IrO2 motifs. The IrOx/SrIrO3 catalyst outperforms known IrOx and ruthenium oxide (RuOx) systems, the only other OER catalysts that have reasonable activity in acidic electrolyte.

A ten-year perspective on dilute magnetic semiconductors and oxides

Abstract: In 2000, a seminal study predicted ferromagnetism above room temperature in diluted magnetic semiconductors and oxides, fuelling tremendous research activity that has lasted for a decade. Tomasz Dietl reviews the progress in understanding these materials over the past ten years, with a view to the future of semiconductor spintronics.

n-Type organic semiconductors in organic electronics.

Abstract: Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

Review of the superconducting properties of MgB2

Abstract: This review paper illustrates the main normal and superconducting state properties of magnesium diboride, a material known since the early 1950s but only recently discovered to be superconductive at a remarkably high critical temperature Tc = 40 K for a binary compound. What makes MgB2 so special? Its high Tc, simple crystal structure, large coherence lengths, high critical current densities and fields, and transparency of grain boundaries to current promise that MgB2 will be a good material for both large-scale applications and electronic devices. During the last seven months, MgB2 has been fabricated in various forms: bulk, single crystals, thin films, tapes and wires. The largest critical current densities, greater than 10 MA cm−2, and critical fields, 40 T, are achieved for thin films. The anisotropy ratio inferred from upper critical field measurements is yet to be resolved as a wide range of values have been reported, γ = 1.2–9. Also, there is no consensus on the existence of a single anisotropic or double energy gap. One central issue is whether or not MgB2 represents a new class of superconductors, which is the tip of an iceberg awaiting to be discovered. To date MgB2 holds the record for the highest Tc among simple binary compounds. However, the discovery of superconductivity in MgB2 revived the interest in non-oxides and initiated a search for superconductivity in related materialss; several compounds have since been announced to be superconductive: TaB2, BeB2.75, C–S composites, and the elemental B under pressure.