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Francis Leonard Deepak

Bio: Francis Leonard Deepak is an academic researcher from University of Texas at San Antonio. The author has contributed to research in topics: Materials science & Nanoparticle. The author has an hindex of 31, co-authored 115 publications receiving 3113 citations. Previous affiliations of Francis Leonard Deepak include Jawaharlal Nehru Centre for Advanced Scientific Research & Council of Scientific and Industrial Research.


Papers
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Journal ArticleDOI
TL;DR: In order to conclusively establish the properties of Mn-and Co-doped ZnO, samples with 6% and 2% dopant concentrations have been prepared by the low-temperature decomposition of acetate solid solutions.
Abstract: Following the theoretical predictions of ferromagnetism in Mn- and Co-doped ZnO, several workers reported ferromagnetism in thin films as well as in bulk samples of these materials. While some observe room-temperature ferromagnetism, others find magnetization at low temperatures. Some of the reports, however, cast considerable doubt on the magnetism of Mn- and Co-doped ZnO. In order to conclusively establish the properties of Mn- and Co-doped ZnO, samples with 6% and 2% dopant concentrations have been prepared by the low-temperature decomposition of acetate solid solutions. The samples have been characterized by X-ray diffraction, EDAX and spectroscopic methods to ensure that the dopants are substitutional. All the Mn- and Co-doped ZnO samples (prepared at 400 °C and 500 °C) fail to show ferromagnetism. Instead, their magnetic properties are best described by a Curie–Weiss type behavior. It appears unlikely that these materials would be useful for spintronics, unless additional carriers are introduced by some means.

307 citations

Posted Content
TL;DR: In order to conclusively establish the properties of Mn-and Co-doped ZnO, samples with 6 percent and 2 percent dopant concentrations, have been prepared by the low-temperature decomposition of acetate solid solutions.
Abstract: Following the theoretical predictions of ferromagnetism in Mn- and Co-doped ZnO, several workers reported ferromagnetism in thin films as well as in bulk samples of these materials. While some observe room-temperature ferromagnetism, others find magnetization at low temperatures. Some of the reports, however, cast considerable doubt on the magnetism of Mn- and Co-doped ZnO. In order to conclusively establish the properties of Mn- and Co-doped ZnO, samples with 6 percent and 2 percent dopant concentrations, have been prepared by the low-temperature decomposition of acetate solid solutions. The samples have been characterized by x-ray diffraction, EDAX and spectroscopic methods to ensure that the dopants are substitutional. All the Mn- and Co-doped ZnO samples (prepared at 400 deg C and 500 deg C) fail to show ferromagnetism. Instead, their magnetic properties are best described by a Curie-Weiss type behavior. It appears unlikely that these materials would be useful for spintronics, unless additional carriers are introduced by some means.

284 citations

Journal ArticleDOI
TL;DR: In this article, the bandgap of ZnO doped with Mn 2+, Co 2+ and Ni 2+ has been measured using EBS and the variation of bandgap with dopant concentration has been examined.

206 citations

Journal ArticleDOI
TL;DR: In this article, simple methods of preparing boron nitride nanotubes and nanowires have been investigated, which involve heating boric acid with activated carbon, multi-walled carbon, catalytic iron particles or a mixture of activated carbon and iron particles, in the presence of NH 3.

150 citations

Journal ArticleDOI
TL;DR: In this paper, the vapor phase pyrolysis of a mixture of cobaltocene or ferrocene with thiophene in a hydrogen atmosphere was used to obtain Y-junction carbon nanotubes.

109 citations


Cited by
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Journal ArticleDOI
TL;DR: The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties are equally important.
Abstract: The interest in nanoscale materials stems from the fact that new properties are acquired at this length scale and, equally important, that these properties * To whom correspondence should be addressed. Phone, 404-8940292; fax, 404-894-0294; e-mail, mostafa.el-sayed@ chemistry.gatech.edu. † Case Western Reserve UniversitysMillis 2258. ‡ Phone, 216-368-5918; fax, 216-368-3006; e-mail, burda@case.edu. § Georgia Institute of Technology. 1025 Chem. Rev. 2005, 105, 1025−1102

6,852 citations

Journal ArticleDOI
Yongjie Zhan1, Zheng Liu1, Sina Najmaei1, Pulickel M. Ajayan1, Jun Lou1 
10 Apr 2012-Small
TL;DR: The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride.
Abstract: Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).

1,602 citations

Journal ArticleDOI
TL;DR: In this article, the analysis of various parameters of metal oxides and the search of criteria, which could be used during material selection for solid-state gas sensor applications, were the main objectives of this review.
Abstract: The analysis of various parameters of metal oxides and the search of criteria, which could be used during material selection for solid-state gas sensor applications, were the main objectives of this review. For these purposes the correlation between electro-physical (band gap, electroconductivity, type of conductivity, oxygen diffusion), thermodynamic, surface, electronic, structural properties, catalytic activity and gas-sensing characteristics of metal oxides designed for solid-state sensors was established. It has been discussed the role of metal oxide manufacturability, chemical activity, and parameter's stability in sensing material choice as well.

1,334 citations

Posted Content
TL;DR: In this article, the authors demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method and demonstrate that the number of layers range from single layer to a few layers.
Abstract: Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.

1,332 citations

Journal ArticleDOI
Jong Heun Lee1
TL;DR: In this article, the authors show that hierarchical and hollow oxide nanostructures increase both the gas response and response speed simultaneously and substantially, which can be explained by the rapid and effective gas diffusion toward the entire sensing surfaces via the porous structures.
Abstract: Hierarchical and hollow oxide nanostructures are very promising gas sensor materials due to their high surface area and well-aligned nanoporous structures with a less agglomerated configurations. Various synthetic strategies to prepare such hierarchical and hollow structures for gas sensor applications are reviewed and the principle parameters and mechanisms to enhance the gas sensing characteristics are investigated. The literature data clearly show that hierarchical and hollow nanostructures increase both the gas response and response speed simultaneously and substantially. This can be explained by the rapid and effective gas diffusion toward the entire sensing surfaces via the porous structures. Finally, the impact of highly sensitive and fast responding gas sensors using hierarchical and hollow nanostructures on future research directions is discussed.

1,330 citations