F
Francisco Guinea
Researcher at Donostia International Physics Center
Publications - 589
Citations - 76971
Francisco Guinea is an academic researcher from Donostia International Physics Center. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 108, co-authored 573 publications receiving 69426 citations. Previous affiliations of Francisco Guinea include University of Évora & Spanish National Research Council.
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Journal ArticleDOI
The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Journal ArticleDOI
Substrate-induced bandgap opening in epitaxial graphene
Shuyun Zhou,Gey-Hong Gweon,Gey-Hong Gweon,Alexei V. Fedorov,Phillip N. First,W. A. de Heer,D.-H. Lee,Francisco Guinea,A. H. Castro Neto,Alessandra Lanzara,Alessandra Lanzara +10 more
TL;DR: It is shown that when graphene is epitaxially grown on SiC substrate, a gap of approximately 0.26 eV is produced and it is proposed that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction.
Journal ArticleDOI
Substrate-induced band gap opening in epitaxial graphene
Shuyun Zhou,Gey-Hong Gweon,Alexei V. Fedorov,P. N. First,W. A. de Heer,D.-H. Lee,Francisco Guinea,A. H. Castro Neto,Alessandra Lanzara +8 more
TL;DR: In this article, the authors show that when epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced and this gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four.
Journal ArticleDOI
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
TL;DR: In this paper, it was shown that a designed strain aligned along three main crystallographic directions induces strong gauge fields that effectively act as a uniform magnetic field exceeding 10'T, similar to the case of a topological insulator.