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Franz Kreupl

Other affiliations: Infineon Technologies, SanDisk, Siemens  ...read more
Bio: Franz Kreupl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Carbon nanotube & Layer (electronics). The author has an hindex of 40, co-authored 269 publications receiving 5986 citations. Previous affiliations of Franz Kreupl include Infineon Technologies & SanDisk.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors compare the electrical properties of carbon nanotubes with equivalent metal wires made of gold and describe their progress in process integration, and propose a multi-walled carbon-nanotubes as an interconnect material of the future.

596 citations

Journal ArticleDOI
TL;DR: This novel nanotransistor technology makes way for a simple and compact hardware platform that can be flexibly reconfigured during operation to perform different logic computations yielding unprecedented circuit design flexibility.
Abstract: Over the past 30 years electronic applications have been dominated by complementary metal oxide semiconductor (CMOS) devices. These combine p- and n-type field effect transistors (FETs) to reduce s...

349 citations

Journal ArticleDOI
TL;DR: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths, and the transistors displayed p-type behaviour, sustained current densities, and on/off current ratios.
Abstract: Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10−30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 107. The on-currents were limited and kept constant by the Schottky contacts for gate lengths below 1 μm, and decreased exponentially for gate lengths exceeding 1 μm.

244 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present an overview of the issues related to the integration of carbon nanotubes into microelectronics systems and discuss the problems associated with the construction of nanotube-based devices.
Abstract: This paper presents an overview of the issues related to the integration of carbon nanotubes into microelectronics systems. Particular emphasis is placed on the use of carbon nanotubes as on-chip wiring (interconnects) and active devices (transistors), the two main building blocks of current semiconductor circuits. The properties of state-of-the art devices are compared in order to test the viability of replacing silicon-based components with carbon nanotubes. Further, the problems associated with the construction of nanotube-based devices are discussed.

211 citations

Patent
14 Mar 2011
TL;DR: In this article, a memory cell may be formed from a metal-insulator-metal (MIM) stack that includes a first conductive layer comprising a silicon-germanium (SiGe) alloy, a resistivity-switching layer, and a metal oxide layer.
Abstract: In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.

190 citations


Cited by
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Journal ArticleDOI
TL;DR: Department of Materials Science, University of Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Triesteadays.
Abstract: Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

3,886 citations

Journal ArticleDOI
TL;DR: In this paper, a review of the current understanding of carbon nanotubes and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT-based functionalization on the properties of polymers.
Abstract: Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

2,849 citations

Journal ArticleDOI
TL;DR: This work reviews the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons and suggests that it could be possible to make both electronic and optoelectronic devices from the same material.
Abstract: The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

2,274 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

PatentDOI
16 Jun 2009-Nature
TL;DR: In this paper, a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, is used to provide a semiconductor channel exhibiting improved electronic properties relative to conventional nanotube-based electronic systems.
Abstract: The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

1,081 citations