The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages ( 400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

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Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain.

Millimeter wave (mmWave) bands have attracted considerable recent interest for next-generation cellular systems due to the massive available spectrum at these frequencies. However, a key challenge in designing mmWave cellular systems is initial access—the procedure by which a mobile device establishes an initial link-layer connection to a cell. MmWave communication relies on highly directional transmissions and the initial access procedure must thus provide a mechanism by which initial transmission directions can be searched in a potentially large angular space. Design options are compared considering different scanning and signaling procedures to evaluate access delay and system overhead. The channel structure and multiple access issues are also considered. The results of our analysis demonstrate significant benefits of low-resolution fully digital architectures in comparison with single stream analog beamforming.

Initial Access in Millimeter Wave Cellular Systems

Overcoming the trade-offs among power consumption, fabrication cost, and signal amplification has been a long-standing issue for wearable electronics. We report a high-gain, fully inkjet-printed Schottky barrier organic thin-film transistor amplifier circuit. The transistor signal amplification efficiency is 38.2 siemens per ampere, which is near the theoretical thermionic limit, with an ultralow power consumption of 60 decibels and noise voltage of <0.3 microvolt per hertz1/2 at 100 hertz.

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Printed subthreshold organic transistors operating at high gain and ultralow power.

A wireless sensor that is powered from the endocochlear potential (EP), a 70-to-100mV bio-potential inside the mammalian ear, has been demonstrated in [1]. Due to the anatomical size and physiological constraints inside the ear, a maximum of 1.1 to 6.25nW can be extracted from the EP. The nanowatt power budget of the sensor gives rise to unique challenges with power conversion efficiency and quiescent current reduction in the power management unit (PMU). While [1] presents the system aspects of the biomedical harvesting including the biologic interface and system measurements, this work presents the details of the nanowatt PMU required to power the electronics. More specifically, it focuses on the low-power circuit design techniques needed to realize a nW power converter that is applicable to a broad spectrum of emerging biomedical applications with ultra-low energy-harvesting sources.

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23.2 A 1.1nW energy harvesting system with 544pW quiescent power for next-generation implants

Nonlinear, voltage-dependent capacitances of power semiconductor devices are capable of having significant impact on the operation of switched-mode power converters. Particularly at high switching frequency, these nonlinearities play a significant role in determining switching times, losses, and converter dynamics during switching transitions. In order to accommodate the well-established design and analysis techniques commonly used for linear circuits, this paper examines the nonlinear voltage-dependence of switching device capacitances and proposes a circuit-oriented analysis technique that allows the parasitic capacitances to be replaced with linear equivalents. The multitude of developed equivalents are verified through full nonlinear simulation in both MATLAB/Simulink and SPICE, as well as through experimental results.

Circuit-Oriented Treatment of Nonlinear Capacitances in Switched-Mode Power Supplies

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Design Of Analog Cmos Integrated Circuits