Showing papers by "Fred Barlow published in 2004"
TL;DR: The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures, and the saturation current becomes 20% at450°C with respect to the value at the room temperature.
Abstract: This paper reports on the measured dc characteristics of a SiC JFET device from room temperature up to 450°C in order to evaluate the device's capability for high-temperature operation. The authors packaged SiC JFET bare die into a dedicated high-temperature package to be able to perform experiments under extremely high ambient temperatures. The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures. For example, the saturation current becomes 20% at 450°C with respect to the value at the room temperature.
27 citations
21 Oct 2004
TL;DR: In this paper, the integration of three-phase brushless DC motors and advanced microelectronic packaging techniques into compact motor controllers is discussed, with the primary focus on the reduction of thermal resistance.
Abstract: This work focuses on technical barriers to the implementation of controllers for auxiliary electric motors for automotive applications. It addresses the integration of three-phase brushless DC motors and advanced microelectronic packaging techniques into compact motor controllers. The proposed packaging techniques are focused on thermal performance utilizing minimum supplemental cooling. The primary focus of this discussion is the reduction of thermal resistance by the elimination of interfaces between the power devices and the heat sink. The initial application of this work is targeted at variable speed compressors for 42 V vehicles.
3 citations