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Showing papers by "Fred Barlow published in 2010"


Proceedings ArticleDOI
18 Mar 2010
TL;DR: In this article, a high efficiency, high temperature inverter based on silicon carbide (SiC) JFET and diode modules was developed and demonstrated with a power rating of 18 kW.
Abstract: Power electronics play an important role in electricity utilization from generation to end customers. Thus, high-efficiency power electronics help to save energy and conserve energy resources. Research on silicon carbide (SiC) power electronics has shown their better efficiency compared to Si power electronics due to the significant reduction in both conduction and switching losses. Combined with their high-temperature capability, SiC power electronics are more reliable and compact. This paper focuses on the development of such a high efficiency, high temperature inverter based on SiC JFET and diode modules. It involves the work on high temperature packaging (>200 °C), inverter design and prototype development, device characterization, and inverter testing. A SiC inverter prototype with a power rating of 18 kW is developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% is achieved by the initial prototype without optimization, which is higher than most Si inverters.

47 citations


Proceedings ArticleDOI
21 Jun 2010
TL;DR: In this paper, the authors developed a high power module based on SiC JFETs and Schottky diodes, which achieved an efficiency of 98.2% at moderate load levels compared to the inverter rating.
Abstract: With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. Research on SiC power electronics has shown their higher efficiency compared to Si power electronics due to significantly lower conduction and switching losses. This paper focuses on the development of a high power module based on SiC JFETs and Schottky diodes. Characterization of a single device, a module developed using the same device, and finally an inverter built using the modules is presented. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% was achieved by the initial prototype.

19 citations


Proceedings ArticleDOI
01 Aug 2010
TL;DR: This paper presents a straightforward procedure for designing four order microstrip dual-mode bandpass filters using full-wave electromagnetic (EM) simulation tools that can be utilized by beginner designer in a microwave filter field, especially for complex distributed microstrip planar structure.
Abstract: This paper presents a straightforward procedure for designing four order microstrip dual-mode bandpass filters using full-wave electromagnetic (EM) simulation tools. This can be utilized by beginner designer in a microwave filter field, especially for complex distributed microstrip planar structure. The designed methodology was demonstrated by fabricated and measured of several experimental samples of fourth order microstrip dual-mode bandpass filters. The simulated and practical results are obtained.

1 citations