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Frederic Milesi

Researcher at University of Grenoble

Publications -  45
Citations -  224

Frederic Milesi is an academic researcher from University of Grenoble. The author has contributed to research in topics: Ion implantation & Doping. The author has an hindex of 8, co-authored 42 publications receiving 194 citations. Previous affiliations of Frederic Milesi include European Automobile Manufacturers Association & Commissariat à l'énergie atomique et aux énergies alternatives.

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Realization of ultra shallow junctions by PIII: application to solar cells

TL;DR: In this paper, the authors presented results obtained by a semi-industrial prototype of PIII (PULSION®) designed by the French company IBS and compared with BF 2 + implantations made on an AXCELIS NV-8200P beam line implanter and demonstrate the compatibility with semiconductor requirements.
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High efficiency fully implanted and co-annealed bifacial n-type solar cells

TL;DR: In this article, a very simple process for the fabrication of large area n-type PERT cells by means of ion implantation was developed, leading to an average efficiency of 19% on 239 cm 2 bifacial solar cells, using only eight processing steps with two implantations and one activation annealing.
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Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices

TL;DR: In this article, the BF3 PIII associated with the LTP was used to obtain a very shallow junction with no TED, abrupt profile and activated depth control, which was characterized at CEA LETI by secondary ion mass spectrometry (SIMS).
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Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

TL;DR: HAL as discussed by the authors is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not, from teaching and research institutions in France or abroad, or from public or private research centers.
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4H-silicon carbide thin junction based ultraviolet photodetectors

TL;DR: In this paper, the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400 nm range were investigated.