F
Fumihiro Matsukura
Researcher at Tohoku University
Publications - 286
Citations - 35298
Fumihiro Matsukura is an academic researcher from Tohoku University. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 68, co-authored 286 publications receiving 33267 citations. Previous affiliations of Fumihiro Matsukura include Polish Academy of Sciences & Systems Research Institute.
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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
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A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
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Electrical spin injection in a ferromagnetic semiconductor heterostructure
TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
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Electric-field control of ferromagnetism
Hideo Ohno,Daichi Chiba,Fumihiro Matsukura,T. Omiya,E. Abe,Tomasz Dietl,Tomasz Dietl,Yuzo Ohno,Keita Ohtani +8 more
TL;DR: By applying electric fields, the ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints is demonstrated, particularly in view of recent developments in magnetoelectronics and spintronics.