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G. E. Fedorov

Bio: G. E. Fedorov is an academic researcher from Kurchatov Institute. The author has contributed to research in topics: Hybrid silicon laser & Nanolithography. The author has an hindex of 2, co-authored 2 publications receiving 10 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, a method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric material.
Abstract: A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric—bismuth oxide. The metal film is formed in the process of reduction of the metal oxide by selective removal of oxygen atoms under irradiation by the beam of protons through a mask. The mask containing pairs of parallel nanowires with contact pads was fabricated using 50 kV electron-beam lithography in a single layer of 200-nm-thick ZEP-520 (Zeon Chemicals L.P., ZEP-520 electron-beam resist) electron-beam resist. Electrical properties of the fabricated nanowires have been studied. Broadening of the fabricated metal wires with respect to the initial mask width was found to be dependent on the energy of irradiating protons. This effect may be attributed to the scattering of protons in the oxide-film. It is shown that the method of selective atom removal combined with high aspect ratio e-beam lithography is a feasible technique for fabrication of metal nanowires ...

7 citations

Journal ArticleDOI
TL;DR: In this paper, a new technique for manufacturing silicon nanowires on the surface of a conventional silicon wafer using ion-beam irradiation through a lithographic mask has been proposed.
Abstract: A new technique for manufacturing silicon nanowires on the surface of a conventional silicon wafer using ion-beam irradiation through a lithographic mask has been proposed. The conditions needed for synthesizing silicon oxide using the irradiation of the silicon substrate by protons with an energy of about 1 keV have been studied. The possibility of synthesizing silicon oxide in the region of the geometric shadow under the monocrystalline silicon nanowire has been demonstrated.

3 citations


Cited by
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Journal ArticleDOI
TL;DR: In this paper, the effects of ion irradiation on the chemical composition of thin-film materials have been investigated and two methods, selective atom binding and selective atom substitution, have been proposed for creating composite structures with a locally changed chemical composition and properties.
Abstract: This study is a continuation of works [1–12] dealing with the field developed by the authors, namely, to widen the possibilities of radiation methods for a controlled change in the atomic composition and properties of thin-film materials. The effects under study serve as the basis for the following two methods: selective atom binding and selective atom substitution. Such changes in the atomic composition are induced by irradiation by mixed beams consisting of protons and other ions, the energy of which is sufficient for target atom displacements. The obtained experimental data demonstrate that the changes in the chemical composition of thin-film materials during irradiation by an ion beam of a complex composition take place according to mechanisms that differ radically from the well-known mechanisms controlling the corresponding chemical reactions in these materials. These radical changes are shown to be mainly caused by the accelerated ioninduced atomic displacements in an irradiated material during irradiation; that is, they have a purely radiation nature. The possibilities of the new methods for creating composite structures consisting of regions with a locally changed chemical composition and properties are demonstrated for a wide class of materials.

13 citations

Journal ArticleDOI
TL;DR: In this article, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ∼(1-3) keV are presented.
Abstract: In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ∼(1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut” are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ∼13.6 K and the density of critical current is jc ∼ 8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms.

11 citations

Journal ArticleDOI
TL;DR: In this paper, the electric properties of the metals reduced from oxides using the selective removal of atoms (SRA) under proton irradiation were investigated and the possibility of creating two isolated nanowires at a distance of 70 nm was shown.
Abstract: The electric properties of films of the metals reduced from oxides using the selective removal of atoms (SRA) under proton irradiation were investigated. The electric characteristics of SRA films were found to correspond to characteristics of the deposited films of pure metals. The possibility of creating nanowires in a matrix of initial oxide under irradiation through a PMMA mask was shown. Individual nanowires and pairs of nanowires from bismuth were created. The electric characteristics of both nanowires and leak currents between closely located nanowires were measured. The possibility of creating two isolated nanowires at a distance of 70 nm was shown.

4 citations

Journal ArticleDOI
TL;DR: In this paper, the authors showed that the formation of ∼50 nm amorphous SiO 2 layer at the top of the wafer is possible at the beginning of irradiation.
Abstract: Composite 1 keV ion beam irradiation was used to oxidise the mono-Si and Si 3 N 4 wafers at room temperature. It was shown the formation of ∼50 nm amorphous SiO 2 layer at the top of the wafer. XTEM EELS data proved the high quality of radiation-induced silicon oxide. In bouth cases, at the beginning of irradiation we have demonstrated the preferable oxidation of inner layers at the irradiation-induced maximun vacancy production depth.

2 citations