G. Gorodetsky

Bio: G. Gorodetsky is an academic researcher from Ben-Gurion University of the Negev. The author has contributed to research in topics: Magnetization & Ferromagnetism. The author has an hindex of 27, co-authored 165 publications receiving 2848 citations. Previous affiliations of G. Gorodetsky include Weizmann Institute of Science.

Magnetic properties of electron-doped La0.23Ca0.77MnO3 nanoparticles

Abstract: Magnetic properties of electron-doped La0.23Ca0.77MnO3 manganite nanoparticles, with average size of 12 and 60 nm, prepared by the glycine–nitrate method, have been investigated in the temperature range 5–300 K and magnetic fields up to 90 kOe. It is suggested that weak ferromagnetic moment results from ferromagnetic shells of the basically antiferromagnetic nanoparticles and from domains of frustrated disordered phase in the core. Assumption of two distinct sources of ferromagnetism is supported by the appearance of two independent ferromagnetic contributions in the fit of the T 3/2 Bloch law to spontaneous magnetization. The ferromagnetic components, which are more pronounced in smaller particles, occupy only a small fraction of the nanoparticle volume and the antiferromagnetic ground state remains stable. It is found that the magnetic hysteresis loops following field cooled processes, display size-dependent horizontal and vertical shifts, namely, exhibiting exchange bias effect. Time-dependent magnetization dynamics demonstrating two relaxation rates were observed at constant magnetic fields upon cooling to T < 100 K.

Low-temperature resistivity minimum in ceramic manganites

Abstract: Measurements of magnetoresistance and magnetization were carried out on ceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3, containing 10 at. % Ag in a dispersed form. The results obtained for the resistivity at zero applied magnetic field exhibit a shallow minimum at the temperature T∼25–30 K which shifts towards lower temperatures upon applying a magnetic field and disappears at a certain field Hcr. Also the resistivity at helium temperature decreases upon applying magnetic fields. It is shown that the model of charge carriers tunneling between antiferromagnetically coupled grains may account for the results observed.

Current-induced metastable resistive states with memory in low-doped manganites

Abstract: The influence of dc current flow on the resistivity and phase transitions in low-doped ${\mathrm{La}}_{0.82}{\mathrm{Ca}}_{0.18}{\mathrm{MnO}}_{3}$ single crystals has been investigated. At low temperatures, where the resistivity strongly increases with decreasing temperature, dc current depresses resistivity in a way consistent with the domination of tunneling-conduction mechanisms. Current flow exceeding some threshold currents results in resistivity switching and metastability. Bipolar current sweep exceeding threshold currents in both positive and negative direction creates low-resistivity states in the sample. The low-resistivity state converts into a very-low- and stable-resistivity state under a stronger bipolar current sweep. Current-induced low-resistivity states are characterized by long-term memory persisting even after storing the sample for a few days at room temperature. The memory can be erased by ac current flow at high temperatures. The results are interpreted in terms of a spin-polarized tunnel conduction mechanism, which modifies phase-separation conditions along the percolation path.

Spin-glass-like properties ofLa0.8Ca0.2MnO3nanoparticles ensembles

Abstract: Magnetic properties of compacted La0.8Ca0.2MnO3 manganite nanoparticles with average particle size of 18 and 70 nm and Curie temperatures TC 231 K and TC 261 K, respectively, have been investigated. The relative volume of the ferromagnetic phase has been estimated to be 52% for ensembles of 18 nm particles and 92% for 70 nm particles. It was found that applied hydrostatic pressure enhances TC of La0.8Ca0.2MnO3 nanoparticles at a rate dTC /dP 1.8– 1.9 K / kbar, independently on the average particle size. Pronounced irreversibility of magnetization below Tirr 208 K and strong frequency dependent ac susceptibility below TC for smaller 18 nm particles have been observed. 18 nm particles have also shown aging and memory effects in zero-field-cooled ZFC and field-cooled magnetization. These features indicate the appearance of spin-glasslike state, partially reminiscent the behavior of La1�xCaxMnO3 crystals, doped below the percolation threshold xxC = 0.225. In contrast, ensembles of larger 70 nm particles have shown insignificant irreversibility of magnetization only and no frequency dependence of ac susceptibility, similarly to the behavior of La1�xCaxMnO3 crystals with xxC. The temperature of the ZFC magnetization maximum for 18 nm particles decreases with increasing magnetic field and forms a critical line with an exponent 1.89 0.56. The results suggest that superspin-glass features in ensembles of interacting 18 nm particles appear along with superferromagnetic-like features.

Anisotropic Spin-Glass Behavior in Fe 2 Ti O 5

Abstract: It is shown that the insulating oxide ${\mathrm{Fe}}_{2}$Ti${\mathrm{O}}_{5}$ exhibits anisotropic (uniaxial) spin-glass behavior below 55 K. Extensive experimental results supporting this conclusion, including principal magnetic susceptibility, neutron scattering, ultrasonic, specific heat, and oriented single-crystal M\"ossbauer measurements, are described.

Spin glasses: Experimental facts, theoretical concepts, and open questions

Abstract: This review summarizes recent developments in the theory of spin glasses, as well as pertinent experimental data. The most characteristic properties of spin glass systems are described, and related phenomena in other glassy systems (dielectric and orientational glasses) are mentioned. The Edwards-Anderson model of spin glasses and its treatment within the replica method and mean-field theory are outlined, and concepts such as "frustration," "broken replica symmetry," "broken ergodicity," etc., are discussed. The dynamic approach to describing the spin glass transition is emphasized. Monte Carlo simulations of spin glasses and the insight gained by them are described. Other topics discussed include site-disorder models, phenomenological theories for the frozen phase and its excitations, phase diagrams in which spin glass order and ferromagnetism or antiferromagnetism compete, the Ne\'el model of superparamagnetism and related approaches, and possible connections between spin glasses and other topics in the theory of disordered condensed-matter systems.

Ferromagnetic materials

Abstract: In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Recent advances in the liquid-phase syntheses of inorganic nanoparticles.

Abstract: The development of novel materials is a fundamental focal point of chemical research; and this interest is mandated by advancements in all areas of industry and technology. A good example of the synergism between scientific discovery and technological development is the electronics industry, where discoveries of new semiconducting materials resulted in the evolution from vacuum tubes to diodes and transistors, and eventually to miniature chips. The progression of this technology led to the development * To whom correspondence should be addressed. B.L.C.: (504) 2801385 (phone); (504) 280-3185 (fax); bcushing@uno.edu (e-mail). C.J.O.: (504)280-6846(phone);(504)280-3185(fax);coconnor@uno.edu (e-mail). 3893 Chem. Rev. 2004, 104, 3893−3946

Synthesis, Properties, and Applications of Iron Nanoparticles

Abstract: Iron, the most ubiquitous of the transition metals and the fourth most plentiful element in the Earth's crust, is the structural backbone of our modern infrastructure. It is therefore ironic that as a nanoparticle, iron has been somewhat neglected in favor of its own oxides, as well as other metals such as cobalt, nickel, gold, and platinum. This is unfortunate, but understandable. Iron's reactivity is important in macroscopic applications (particularly rusting), but is a dominant concern at the nanoscale. Finely divided iron has long been known to be pyrophoric, which is a major reason that iron nanoparticles have not been more fully studied to date. This extreme reactivity has traditionally made iron nanoparticles difficult to study and inconvenient for practical applications. Iron however has a great deal to offer at the nanoscale, including very potent magnetic and catalytic properties. Recent work has begun to take advantage of iron's potential, and work in this field appears to be blossoming.

Emerging memories: resistive switching mechanisms and current status.

Abstract: The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.